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Vishay N-Channel MOSFET 30 A 200 V Enhancement Mode 3-Pin TO-247 IRFP250PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP250PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP250 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 85mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 140nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2V |
Key Features
- This MOSFET features a TO-247 package and a through-hole mount type for easy installation.
- The device has a pin count of 3 and a maximum drain-source resistance of 85 milliohms.
- It supports a maximum power dissipation of 190 W and a typical gate charge of 140 nC at Vgs.
- Operates safely in temperatures ranging from -55°C to 150°C providing high reliability in demanding environments.
- Gate-source voltage range is -20 V to +20 V, suitable for various switching applications.
- Forward voltage of 2 V ensures efficient power management.
Product Description
Vishay IRFP250PBF N-Channel MOSFET is a high-performance discrete semiconductor designed for power switching and amplification applications. With a maximum continuous drain current of 30 A and a maximum drain-source voltage of 200 V, it operates efficiently in enhancement mode and is packaged in a 3-pin TO-247 through-hole mount configuration.
This MOSFET offers a low maximum drain-source resistance of 85 milliohms, contributing to excellent conduction efficiency and reduced heat generation. The maximum power dissipation is rated at 190 W, supporting robust performance in industrial and electronic power management scenarios.
Engineered to operate across a wide temperature range (-55°C to 150°C), the IRFP250PBF remains reliable under harsh industrial conditions, making it suitable for applications in power supplies, motor control, and automotive electronics. The typical gate charge of 140 nC ensures fast switching capabilities essential for high-frequency operation.
The device supports a maximum gate-source voltage of -20 V to +20 V, providing flexibility for various control circuits. Forward voltage is maintained at 2 V, optimizing power efficiency.
Physical dimensions of 20.7 mm height, 15.87 mm length, and 5.31 mm width ensure compatibility with standard power electronic assemblies. The robust TO-247 package and through-hole mount facilitate secure and durable installation, suitable for manufacturing environments.
This MOSFET is ideal for industrial power electronics, laboratory equipment, manufacturing devices, and HVAC systems. It supports enhancement mode N-channel switching for efficient control in various circuits. Compact form factor and high power ratings make it a versatile component for commercial electronics.
Package contents include a single IRFP250PBF transistor ready for integration into power circuits. Explore more Vishay semiconductor components for your power management needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 30 A.
This model has a maximum drain-source voltage rating of 200 V.
The maximum power dissipation is rated at 190 W.
The typical gate charge at Vgs is 140 nC.
The maximum gate-source voltage range is -20 V to +20 V.
The dimensions are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.
The maximum drain-source resistance is 85 milliohms.
It can operate safely in temperatures ranging from -55°C to 150°C.
This model uses a through-hole mount type for installation.
The forward voltage is maintained at 2 V.
It is suitable for applications in power supplies, motor control, and automotive electronics.
This MOSFET features an N-channel type for enhancement mode operation.
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