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onsemi N-Channel MOSFET, 200 mA, 50 V Enhancement Mode, 3-Pin SOT-23 Surface Mount BSS138L

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.01mm
Length 3.04mm
Model BSS138L
Width 1.4mm
Mount Type Surface
Series BSS138L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 200mA
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 10Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 225mW
Typical Gate Charge Qg @ Vgs 2.4nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.4V

Key Features

  • Provides enhancement mode operation for efficient switching.
  • Maximum power dissipation rated at 225 mW.
  • Features low forward voltage of 1.4 V for minimal power loss.
  • Typical gate charge of 2.4 nC supports rapid switching performance.
  • Operates reliably in a wide temperature range from -55°C to 150°C.
  • Includes automotive AEC-Q101 standard certification for quality assurance.
  • Ideal for DC-DC converters and power management in portable electronics.
  • Suitable for applications such as computers, printers, PCMCIA cards, and cordless phones.

Product Description

onsemi BSS138L is an N-Channel enhancement mode MOSFET designed for low voltage and low current switching applications. With a maximum continuous drain current of 200 mA and a drain-source voltage rating of 50 V, this device delivers reliable performance in compact surface mount configurations.

The device package is the miniature 3-pin SOT-23, enabling space-saving board layouts. The BSS138L MOSFET features a low forward voltage of 1.4 V and a maximum power dissipation of 225 mW, making it suitable for efficient power control.

Typical gate charge is 2.4 nC measured at gate-source voltage, allowing fast switching speeds required in DC-DC converters and power management modules. The device can operate continuously over a broad temperature range from -55°C to 150°C, ensuring durability in harsh industrial and automotive environments.

This MOSFET complies with the automotive AEC-Q101 standard, indicating robustness for use in automotive electronic systems. Its compact size and surface mount design make it favored for portable and battery-powered devices such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Enhancement mode N-channel operation enables efficient switching. Compact 3-pin SOT-23 surface mount package saves board space. Supports 200 mA maximum continuous drain current. Rated for 50 V maximum drain-source voltage.

Low forward voltage of 1.4 V reduces power losses. Maximum power dissipation of 225 mW. Typical gate charge of 2.4 nC for fast switching. Wide operating temperature range from -55°C to 150°C. Automotive AEC-Q101 certified for automotive use.

Ideal for DC-DC converters and portable device power management.

Applications include industrial, automotive, consumer electronics, and telecommunications sectors. Use onsemi BSS138L for reliable signal amplification, switching, and energy-efficient power solutions.

Discover a wide range of semiconductor products and solutions for electronic circuit design and manufacturing in EnvMart's Electronics & Electricals category.

onsemi N-Channel MOSFET, 200 mA, 50 V Enhancement Mode, 3-Pin SOT-23 Surface Mount BSS138L
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Frequently Asked Questions

The maximum continuous drain current for this model is 200 mA.

It has a maximum drain-source voltage rating of 50 V.

The typical gate charge is 2.4 nC measured at gate-source voltage.

This model has a height of 1.01 mm, a length of 3.04 mm, and a width of 1.4 mm.

The maximum power dissipation for the BSS138L is rated at 225 mW.

It operates reliably in a wide temperature range from -55°C to 150°C.

This model uses a 3-pin SOT-23 surface mount package.

It complies with the automotive AEC-Q101 standard for quality assurance.

The forward voltage is specified at 1.4 V, which helps reduce power losses.

It features an N-channel with enhancement mode operation.

This MOSFET is suitable for applications such as DC-DC converters, power management in portable electronics, computers, printers, and cordless phones.

The maximum gate-source voltage is 20 V.

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