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onsemi Infrared Phototransistor Through Hole 4-Pin Custom 4L Package QRD1113
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 4.65mm |
| Length | 4.39mm |
| Model | QRD1113 |
| Packaging | Bulk |
| Width | 6.1mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 85°C |
| Package Type | Custom 4L |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Number of Pins | 4 |
| Typical Rise Time | 10μs |
| Typical Fall Time | 50μs |
| Peak Wavelength | 940nm |
| Spectrums Detected | Infrared |
| Collector Current | 0.3mA |
| Maximum Dark Current | 100nA |
| Collector Emitter Voltage | 30V |
| Emitter Collector Voltage | 5V |
Key Features
- The device combines an infrared emitting diode and an NPN silicon photo darlington.
- It features a compact black plastic housing with dimensions approximately 4.65mm height, 4.39mm length, and 6.1mm width.
- The phototransistor operates within a temperature range of -40°C to 85°C.
- Typical rise time is 10 microseconds and typical fall time is 50 microseconds for fast response.
- The peak wavelength detection is 940 nm in the infrared spectrum.
- Maximum collector current is rated at 0.3 mA with a maximum collector-emitter voltage of 30 V.
- Designed for use in applications such as medical electronics, automation, test and measurement, and building controls.
- The device is bulk packaged, intended for efficient insertion in production lines.
Product Description
onsemi QRD1113 Infrared Phototransistor is a reliable through hole 4-pin custom 4L package sensor that includes an infrared emitting diode and an NPN silicon photo darlington mounted side by side in a compact black plastic housing. It is engineered to detect reflected infrared radiation effectively, making it ideal for sensing reflective objects or surfaces within its field of view.
The device features a peak wavelength of 940 nanometers which makes it well suited for infrared applications. It operates efficiently within a temperature range of -40°C to 85°C and has a fast response time indicated by typical rise and fall times of 10 μs and 50 μs respectively.
With a collector current capacity of 0.3 mA and maximum collector-emitter voltage of 30 V, the QRD1113 is suitable for a variety of industrial and commercial applications including medical device sensing, automation controls, test and measurement instrumentation, and building control systems.
This infrared phototransistor is designed for through hole mounting and comes in a bulk package, facilitating easy handling and integration into production machinery, thus enhancing manufacturing efficiency.
The device combines an infrared emitting diode and an NPN photo darlington. Compact black plastic housing measuring approximately 4.65 mm height, 4.39 mm length, and 6.1 mm width. Operating temperature from -40°C to 85°C ensures robust performance in harsh environments.
Fast switching with rise time of 10 µs and fall time of 50 µs. Infrared detection optimized at 940 nm wavelength. Maximum collector current of 0.3 mA and voltage ratings suitable for varied circuits. Bulk packaging supports manufacturing and automation processes.
This QRD1113 phototransistor from onsemi is a key component for electronic applications requiring accurate infrared detection and rapid response. It finds use across many domains like industrial automation, medical electronics, and instrumentation where reliable optoelectronic sensing is critical.
Explore related Phototransistors and optoelectronic components in the Electronics & Electricals category on EnvMart for your design and manufacturing needs.
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Frequently Asked Questions
The QRD1113 operates efficiently within a temperature range of -40°C to 85°C.
This model has dimensions of approximately 4.65 mm in height, 4.39 mm in length, and 6.1 mm in width.
The peak wavelength for infrared detection in this phototransistor is 940 nm.
The typical rise time is 10 microseconds, and the typical fall time is 50 microseconds.
The maximum collector current for the QRD1113 is rated at 0.3 mA.
This infrared phototransistor is designed for through hole mounting.
The maximum collector-emitter voltage for the QRD1113 is 30 V.
It is bulk packaged, which facilitates easy handling and integration into production machinery.
The QRD1113 has 4 pins.
This phototransistor is suitable for applications such as medical electronics, automation, test and measurement, and building controls.
The maximum dark current for the QRD1113 is 100 nA.
The QRD1113 uses a custom 4L package type.
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