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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | TIP121 |
| Mount Type | Through Hole |
| Series | TIP121 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 5A |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Collector Cut-off Current | 0.2mA |
| Maximum Power Dissipation Pd | 65W |
| STMicroelectronics TIP121 NPN Darlington Transistor, 5 A 80 V HFE | 1000, 3-Pin TO-220Brand: STMicroelectronics |
STMicroelectronics TIP121 is a high-performance NPN Darlington Transistor designed for power amplification and switching in electronic circuits. Rated for a maximum continuous collector current of 5 A and a collector emitter voltage of 80 V, it is suitable for medium power applications requiring high gain with a minimum DC current gain (hFE) value of 1000.
This device is housed in a TO-220 package which facilitates reliable through-hole mounting and effective heat dissipation. Its maximum power dissipation rating of 65 W ensures stable operation under significant load conditions.
Operating temperature range extends from -65°C to 150°C, making it ideal for applications exposed to varying thermal environments. The transistor features a low collector emitter saturation voltage of 2 V which reduces losses during switching and enhances overall circuit efficiency.
With its 3-pin configuration and single element per chip design, the TIP121 integrates easily into diverse circuit layouts and supports robust electrical performance. The transistor polarity is NPN, and it includes voltage limits of 5 V on the emitter base and 80 V on the collector base, ensuring safe operation within defined electrical boundaries.
This transistor is widely used in amplifier stages, relay drivers, and other electronic switching applications in industrial and automotive circuits where high current gain and durability are critical.
This transistor features a TO-220 package with through-hole mount type. It provides a maximum power dissipation rating of 65 W for thermal robustness. The device operates in a temperature range from -65°C to 150°C suitable for demanding environments.
It has a low saturation voltage (VceSAT) of 2 V, enabling efficient switching applications. Designed as a single element per chip, it supports a 3-pin configuration for easy PCB integration. The transistor polarity is NPN with a maximum emitter base voltage of 5 V and maximum collector base voltage of 80 V.
Maximum collector cut-off current is 0.2 mA minimizing leakage in off state. This component complies with common industry standards but does not have specific automotive certifications. Explore the Electronics & Electricals category on EnvMart for more semiconductors and transistor solutions from trusted brands such as STMicroelectronics.
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