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| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | NTR3C21NZT1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | NTR3C21NZ |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 470mW |
| Typical Gate Charge Qg @ Vgs | 17.8nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | 1V |
onsemi NTR3C21NZT1G is an N-Channel Enhancement Mode MOSFET designed for surface mount applications, housed in a compact 3-Pin SOT-23 package. Rated for a maximum continuous drain current of 3.6 A and a maximum drain-source voltage of 20 V, it ensures reliable low-voltage switching performance. This device incorporates advanced trench technology, resulting in ultra-low Rds(on) of 55 milliohms, which maximizes system efficiency and reduces power loss.
The MOSFET supports a forward voltage of 1 V and a typical gate charge of 17.8 nC at Vgs, enabling fast switching speeds suitable for power load switch and power management circuits. It operates over a wide temperature range from -55°C to 150°C, ensuring durable and stable performance in demanding environments.
Its surface mount SOT-23 package measures 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height, offering a compact footprint ideal for space-constrained PCB designs. The device’s maximum gate-source voltage rating is 8 V, providing protection against gate overvoltage.
Applications for the onsemi NTR3C21NZT1G MOSFET span industrial equipment, consumer electronics, power supplies, and automotive power management where efficient switching and low power dissipation are critical.
Maximum continuous drain current: 3.6 A ensures reliable current handling capability. Maximum drain-source voltage: 20 V suitable for low-voltage circuit designs. Ultra-low drain-source resistance (Rds(on)) minimizes conduction losses.
Advanced trench technology enhances efficiency and switching performance. Wide operating temperature range supports diverse application environments. Compact 3-pin SOT-23 surface mount package for flexible PCB layouts. Forward voltage of 1 V facilitates effective switching with low losses.
Maximum power dissipation of 470 mW maintains device reliability. Typical gate charge of 17.8 nC enables fast switching speeds. Maximum gate-source voltage of 8 V protects against gate overvoltage.
This MOSFET is an essential component for efficient power switching and load management in industrial, electronic, and automotive systems. It combines size, performance, and thermal resilience suitable for today's rigorous power management requirements. Explore more MOSFETs and semiconductor components at EnvMart, your source for high-quality, reliable electronics parts.
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