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onsemi N-Channel MOSFET, 3.6 A, 20 V Enhancement, 3-Pin SOT-23 Package NTR3C21NZT1G

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 1.01mm
Length 3.04mm
Model NTR3C21NZT1G
Width 1.4mm
Mount Type Surface
Series NTR3C21NZ
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 3.6A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 55mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 470mW
Typical Gate Charge Qg @ Vgs 17.8nC
Maximum Gate Source Voltage Vgs 8V
Forward Voltage Vf 1V

Key Features

  • This MOSFET supports a maximum continuous drain current of 3.6 amps.
  • The maximum drain-source voltage is rated at 20 volts to enable low-voltage switching.
  • Featuring an ultra-low drain-source resistance of 55 milliohms for minimal power losses.
  • The device utilizes advanced trench technology for improved system efficiency.
  • Typical gate charge at Vgs is 17.8 nanocoulombs, aiding in fast switching performance.
  • Operating temperature ranges from -55 degrees Celsius to 150 degrees Celsius for robust operation.
  • Compact SOT-23 3-pin surface mount package measuring 3.04 mm length and 1.4 mm width.
  • Suitable for power management and power load switch applications in industrial and consumer electronics.

Product Description

onsemi NTR3C21NZT1G is an N-Channel Enhancement Mode MOSFET designed for surface mount applications, housed in a compact 3-Pin SOT-23 package. Rated for a maximum continuous drain current of 3.6 A and a maximum drain-source voltage of 20 V, it ensures reliable low-voltage switching performance. This device incorporates advanced trench technology, resulting in ultra-low Rds(on) of 55 milliohms, which maximizes system efficiency and reduces power loss.

The MOSFET supports a forward voltage of 1 V and a typical gate charge of 17.8 nC at Vgs, enabling fast switching speeds suitable for power load switch and power management circuits. It operates over a wide temperature range from -55°C to 150°C, ensuring durable and stable performance in demanding environments.

Its surface mount SOT-23 package measures 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height, offering a compact footprint ideal for space-constrained PCB designs. The device’s maximum gate-source voltage rating is 8 V, providing protection against gate overvoltage.

Applications for the onsemi NTR3C21NZT1G MOSFET span industrial equipment, consumer electronics, power supplies, and automotive power management where efficient switching and low power dissipation are critical.

Maximum continuous drain current: 3.6 A ensures reliable current handling capability. Maximum drain-source voltage: 20 V suitable for low-voltage circuit designs. Ultra-low drain-source resistance (Rds(on)) minimizes conduction losses.

Advanced trench technology enhances efficiency and switching performance. Wide operating temperature range supports diverse application environments. Compact 3-pin SOT-23 surface mount package for flexible PCB layouts. Forward voltage of 1 V facilitates effective switching with low losses.

Maximum power dissipation of 470 mW maintains device reliability. Typical gate charge of 17.8 nC enables fast switching speeds. Maximum gate-source voltage of 8 V protects against gate overvoltage.

This MOSFET is an essential component for efficient power switching and load management in industrial, electronic, and automotive systems. It combines size, performance, and thermal resilience suitable for today's rigorous power management requirements. Explore more MOSFETs and semiconductor components at EnvMart, your source for high-quality, reliable electronics parts.

onsemi N-Channel MOSFET, 3.6 A, 20 V Enhancement, 3-Pin SOT-23 Package NTR3C21NZT1G
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Frequently Asked Questions

The maximum continuous drain current for this model is 3.6 A.

This MOSFET has a maximum drain-source voltage rating of 20 V.

The device features an ultra-low drain-source resistance (Rds(on)) of 55 milliohms.

The typical gate charge at Vgs for this model is 17.8 nanocoulombs.

It operates over a wide temperature range from -55°C to 150°C.

The SOT-23 package measures 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.

The maximum gate-source voltage rating for this model is 8 V.

This MOSFET is suitable for applications in power management, power load switching, industrial equipment, and consumer electronics.

The forward voltage of this device is rated at 1 V.

The maximum power dissipation for this MOSFET is 470 mW.

This model has an N-channel type configuration.

The device is designed for surface mount applications.

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