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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 0.9mm |
| Length | 3mm |
| Model | DMC2057UVT-7 |
| Width | 1.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | TSOT |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, AEC-Q101, MIL-STD-202, J-STD-020, UL 94V-0 |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.1W |
| Typical Gate Charge Qg @ Vgs | 4.7nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Dual |
DiodesZetex DMC2057UVT-7 is a dual-channel MOSFET device featuring type N and type P channels with enhancement mode operation, rated for a maximum continuous drain current of 4 A and a drain-source voltage of 20 V. Housed in a compact 6-pin TSOT surface-mount package, this MOSFET is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance essential for high efficiency power management systems.
The device exhibits fast switching capabilities and low input capacitance, contributing to lower power loss and reduced heat generation during operation. This makes it ideal for power management functions including DC-DC converters and backlighting applications commonly found in industrial, consumer electronics, and automotive electronics. DiodesZetex DMC2057UVT-7 operates reliably across a wide temperature range from -55°C up to +150°C and supports a maximum power dissipation of 1.1 W, ensuring robustness for demanding environments.
Manufactured to meet stringent quality standards, the MOSFET complies with RoHS, AEC-Q101, MIL-STD-202, J-STD-020, and UL 94V-0 certifications, endorsing its reliability and safety in critical applications. The device is lead-free and free from halogen and antimony, qualifying as a green, environmentally friendly component.
The transistor features a typical gate charge of 4.7 nC at Vgs, a maximum gate-source voltage of 12 V, forward voltage of 0.7 V, and low drain-source resistance of 160 milliohms, ensuring efficient switching and low conduction losses. Its dual-channel configuration integrates two MOSFETs per chip, optimizing board space and simplifying circuit design.
This MOSFET is an excellent choice for electronic design engineers requiring compact, efficient, and reliable discrete semiconductor components for power management and switching applications. Applications span electronics manufacturing, power supplies, automotive circuits, and consumer electronics.
The device features low on-resistance for high efficiency power management. It supports fast switching speed with low input capacitance. The MOSFETs provide low input/output leakage currents. Designed as a lead-free, halogen and antimony free green device.
Suitable for applications including backlighting and DC-DC converters. Compact dimensions allow surface mounting on PCBs with 6 pins. Robust operating temperature range from -55°C to +150°C. Maximum power dissipation of 1.1 W ensures reliable thermal performance.
Complies with RoHS, AEC-Q101, MIL-STD-202, J-STD-020, and UL 94V-0 standards.
Explore the Electronics & Electricals category for more semiconductor components like the DiodesZetex DMC2057UVT-7 MOSFET, ideal for professional and industrial applications on EnvMart.
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