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DiodesZetex DMG Type P-Channel MOSFET 4 A 20 V Enhancement SOT-23 3-Pin DMG3415U-7-57

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1mm
Length 3mm
Model DMG3415U-7-57
Width 1.4mm
Mount Type Surface
Series DMG
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 4A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 71mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 900mW
Typical Gate Charge Qg @ Vgs 9.1nC
Maximum Gate Source Voltage Vgs 8V

Key Features

  • Features a low on-state resistance for improved efficiency.
  • Equipped with a 3-pin SOT-23 surface mount package for compact integration.
  • Supports a maximum gate-source voltage of 8 V with enhancement mode operation.
  • Capable of dissipating up to 900 mW of power for high performance.
  • Operational temperature range spans from -55°C to 150°C for robust reliability.
  • Automotive standard compliant with AEC-Q101 certification.
  • Includes low input capacitance and fast switching speed characteristics.
  • Environmentally friendly with lead-free and halogen-free construction.

Product Description

DiodesZetex DMG3415U-7-57 is a high-performance P-Channel MOSFET designed for efficient power switching and management in electronic applications. It supports a continuous drain current of 4 A and a maximum drain-source voltage of 20 V, making it suitable for DC-DC converters and power management circuits.

This MOSFET features an enhancement mode channel with a low drain-source resistance of 71 mΩ, allowing low power dissipation during operation. Its compact 3-pin SOT-23 package facilitates easy surface mounting on PCBs, offering a minimal footprint of 3 mm length, 1.4 mm width, and 1 mm height.

Operational reliability is enhanced by a wide temperature tolerance range from -55°C up to 150°C. The device adheres to automotive standard AEC-Q101, attesting to its robustness for automotive and industrial use.

Additional features include a maximum gate-source voltage rating of 8 V and a typical gate charge of 9.1 nC, supporting fast switching speed and low leakage currents. The MOSFET is lead-free, halogen-free, and complies with green environmental standards, ensuring safe deployment in environmentally sensitive applications.

Low on-state resistance ensures efficient power management. Compact, surface-mount SOT-23 package for flexible installation. Wide temperature operating range supports demanding environments. Automotive standard AEC-Q101 compliance guarantees high quality.

Environmentally friendly lead-free and halogen-free materials. Fast switching capability with low gate charge enhances performance. Suitable for DC-DC converters and power management functions. This MOSFET is ideal for use in industrial power supplies, automotive electronics, consumer devices, and any application requiring reliable high-efficiency switching components.

Explore our full range of semiconductor devices for your design and manufacturing needs in the Electronics & Electricals category at EnvMart.

DiodesZetex DMG Type P-Channel MOSFET 4 A 20 V Enhancement SOT-23 3-Pin DMG3415U-7-57
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Frequently Asked Questions

The maximum continuous drain current for this model is 4 A.

It supports a maximum drain-source voltage of 20 V.

The on-state resistance is 71 mΩ, which contributes to low power dissipation during operation.

The DMG3415U-7-57 comes in a SOT-23 package with dimensions of 3 mm in length, 1.4 mm in width, and 1 mm in height.

The operational temperature range spans from -55°C to 150°C.

The maximum gate-source voltage rating is 8 V.

It complies with the automotive standard AEC-Q101.

The typical gate charge is 9.1 nC.

This model features a P-Channel enhancement mode channel.

It is lead-free and halogen-free, complying with green environmental standards.

This MOSFET is suitable for DC-DC converters and power management applications.

The maximum power dissipation capability is 900 mW.

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