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DiodesZetex DMP Type P-Channel MOSFET, 4.5 A, 60 V Enhancement Mode, 8-Pin SOIC Package DMP6110SSS-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.5mm
Length 4.95mm
Model DMP6110SSS-13
Width 3.95mm
Mount Type Surface
Series DMP
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 4.5A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 130mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2W
Typical Gate Charge Qg @ Vgs 19.4nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • Supports enhancement mode operation for reliable switching performance.
  • Features a maximum drain-source resistance of 130 milliohms for efficient power handling.
  • Has a typical gate charge of 19.4 nanocoulombs at gate-source voltage for fast switching.
  • Operates within a temperature range from -55°C to 150°C, suitable for demanding industrial environments.
  • Constructed with Surface Mount Technology compatible SOIC package for compact PCB design.
  • Designed to meet the AEC-Q101 automotive standard ensuring high reliability.
  • Has a maximum power dissipation rating of 2 watts for thermal robustness.

Product Description

DiodesZetex DMP6110SSS-13 is a P-Channel MOSFET transistor designed for electronic components and power management applications. This MOSFET is built in an 8-pin SOIC package and supports enhancement mode operation, enabling efficient switching with a low on-resistance of 130 milliohms.

With a maximum continuous drain current of 4.5 amperes and a drain-source voltage of up to 60 volts, it suits a wide range of power electronic circuits requiring moderate current handling and voltage blocking capabilities.

This device is designed to operate reliably over a wide temperature range from -55°C up to 150°C, making it appropriate for industrial, automotive, and commercial electronics environments. Compliance with AEC-Q101 automotive standard adds to its suitability for automotive electronics.

Featuring a typical gate charge of 19.4 nanocoulombs at specified gate-source voltage, it facilitates rapid switching speeds that improve device efficiency. The maximum power dissipation rating of 2 watts ensures thermal stability during operation.

The SOIC package dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height allow compact PCB mounting suitable for modern electronics designs. Supports enhancement mode operation for reliable switching performance. Maximum drain-source resistance of 130 milliohms ensures efficient conduction.

Wide operating temperature range supports harsh industrial and automotive conditions. Meets AEC-Q101 automotive quality standard for high reliability. Low typical gate charge enables quick switching. Compact SOIC package ideal for space-constrained applications.

Maximum power dissipation of 2 watts supports thermal demands. Surface mount mount type for automated PCB assembly.

This P-Channel MOSFET is applicable in automotive electronics, industrial controls, power converters, and other semiconductor applications requiring robust and efficient switching components. EnvMart provides this DiodesZetex MOSFET for electronics manufacturing and repair needs.

DiodesZetex DMP Type P-Channel MOSFET, 4.5 A, 60 V Enhancement Mode, 8-Pin SOIC Package DMP6110SSS-13
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Frequently Asked Questions

The maximum continuous drain current for this model is 4.5 amperes.

It has a maximum drain-source voltage of 60 volts.

The typical gate charge is 19.4 nanocoulombs.

The maximum power dissipation rating is 2 watts.

This model operates within a temperature range from -55°C to 150°C.

The SOIC package dimensions are 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height.

It is designed to meet the AEC-Q101 automotive standard, ensuring high reliability.

This model supports surface mount technology for compact PCB design.

The maximum drain-source resistance is 130 milliohms.

It is applicable in automotive electronics, industrial controls, and power converters.

The channel mode is enhancement, which supports reliable switching performance.

The forward voltage is -1.2 volts.

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