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| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 9.65mm |
| Model | IRF830ALPBF |
| Width | 10.67mm |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-262 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 1.4Ω |
| Maximum Power Dissipation Pd | 74W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
| Transistor Configuration | Single |
Vishay IRF830ALPBF Single 1 N-Channel Power MOSFET is a high-voltage switching transistor rated at 500 V drain-source voltage and a continuous drain current of 5 A. Packaged in a TO-262 3-pin configuration, it is engineered for efficiency with a maximum Rds(on) of 1.4 Ohms and a power dissipation of 74 W, allowing it to handle thermal loads effectively in various electronic systems.
This Power MOSFET features a typical gate charge of 24 nC, facilitating rapid switching transitions essential for power conversion and pulse control duties. It robustly tolerates a ±30 V gate voltage and operates reliably over an extended temperature range from -55°C to 150°C, making it well suited for use in adverse and industrial environments.
The single transistor element chip provides a solitary switching channel for applications requiring precise control in power supplies, motor drives, industrial lamp and heater control, as well as offline switch-mode power supplies. Its compact physical dimensions of 10.67 mm width, 9.65 mm length, and 4.83 mm height simplify integration in space-constrained electronic assemblies.
Manufactured to meet RoHS 2002/95/EC and IEC 61249-2-21 environmental standards, the IRF830ALPBF emphasizes compliance and safety while delivering performance. It is an ideal choice for engineers designing power conditioning equipment, auxiliary power supplies, and high-voltage motor drive front ends.
This MOSFET features a maximum drain-source resistance (Rds(on)) of 1.4 Ohms, reducing conduction losses. It supports a maximum gate-source voltage of ±30 V for robust gate driving. The device has a power dissipation capability of 74 W, aiding thermal management.
Typical gate charge is 24 nC, allowing fast switching transitions. Operating temperature ranges from -55°C to 150°C, suitable for harsh environments. Constructed with a single transistor element per chip for reliable switching operation.
Compact dimensions of 10.67 mm width, 9.65 mm length, and 4.83 mm height enable space-saving designs. Compliance with RoHS 2002/95/EC and IEC 61249-2-21 standards ensures environmental safety. Designed for industrial and commercial applications including high-voltage switching, motor drives, and power conversion circuits.
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