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Vishay Single 1 N-Channel Power MOSFET, 5 A Continuous Drain Current, 500 V Drain-Source Voltage, 3-Pin TO-262 IRF830ALPBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 4.83mm
Length 9.65mm
Model IRF830ALPBF
Width 10.67mm
Maximum Operating Temperature 150°C
Package Type TO-262
Minimum Operating Temperature -55°C
Pin Count 3
Number of Elements per Chip 1
Channel Type N
Maximum Continuous Drain Current Id 5A
Maximum Drain Source Voltage Vds 500V
Maximum Drain Source Resistance Rds 1.4Ω
Maximum Power Dissipation Pd 74W
Typical Gate Charge Qg @ Vgs 24nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.5V
Transistor Configuration Single

Key Features

  • This MOSFET features a maximum drain-source resistance (Rds(on)) of 1.4 Ohms, reducing conduction losses.
  • It supports a maximum gate-source voltage of ±30 V for robust gate driving.
  • The device has a power dissipation capability of 74 W, aiding thermal management.
  • Typical gate charge is 24 nC, allowing fast switching transitions.
  • Operating temperature ranges from -55°C to 150°C, suitable for harsh environments.
  • Constructed with a single transistor element per chip for reliable switching operation.
  • Compact dimensions of 10.67 mm width, 9.65 mm length, and 4.83 mm height enable space-saving designs.
  • Compliance with RoHS 2002/95/EC and IEC 61249-2-21 standards ensures environmental safety.

Product Description

Vishay IRF830ALPBF Single 1 N-Channel Power MOSFET is a high-voltage switching transistor rated at 500 V drain-source voltage and a continuous drain current of 5 A. Packaged in a TO-262 3-pin configuration, it is engineered for efficiency with a maximum Rds(on) of 1.4 Ohms and a power dissipation of 74 W, allowing it to handle thermal loads effectively in various electronic systems.

This Power MOSFET features a typical gate charge of 24 nC, facilitating rapid switching transitions essential for power conversion and pulse control duties. It robustly tolerates a ±30 V gate voltage and operates reliably over an extended temperature range from -55°C to 150°C, making it well suited for use in adverse and industrial environments.

The single transistor element chip provides a solitary switching channel for applications requiring precise control in power supplies, motor drives, industrial lamp and heater control, as well as offline switch-mode power supplies. Its compact physical dimensions of 10.67 mm width, 9.65 mm length, and 4.83 mm height simplify integration in space-constrained electronic assemblies.

Manufactured to meet RoHS 2002/95/EC and IEC 61249-2-21 environmental standards, the IRF830ALPBF emphasizes compliance and safety while delivering performance. It is an ideal choice for engineers designing power conditioning equipment, auxiliary power supplies, and high-voltage motor drive front ends.

This MOSFET features a maximum drain-source resistance (Rds(on)) of 1.4 Ohms, reducing conduction losses. It supports a maximum gate-source voltage of ±30 V for robust gate driving. The device has a power dissipation capability of 74 W, aiding thermal management.

Typical gate charge is 24 nC, allowing fast switching transitions. Operating temperature ranges from -55°C to 150°C, suitable for harsh environments. Constructed with a single transistor element per chip for reliable switching operation.

Compact dimensions of 10.67 mm width, 9.65 mm length, and 4.83 mm height enable space-saving designs. Compliance with RoHS 2002/95/EC and IEC 61249-2-21 standards ensures environmental safety. Designed for industrial and commercial applications including high-voltage switching, motor drives, and power conversion circuits.

Explore more power management components and semiconductor solutions at EnvMart.

Vishay Single 1 N-Channel Power MOSFET, 5 A Continuous Drain Current, 500 V Drain-Source Voltage, 3-Pin TO-262 IRF830ALPBF
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Frequently Asked Questions

The maximum drain-source voltage for this model is 500 V.

This MOSFET has a continuous drain current rating of 5 A.

It has a maximum power dissipation capability of 74 W, which aids in thermal management.

The dimensions of the TO-262 package are 10.67 mm in width, 9.65 mm in length, and 4.83 mm in height.

This model supports a maximum gate-source voltage of ±30 V.

The typical gate charge for this device is 24 nC, allowing for fast switching transitions.

It operates within a temperature range of -55°C to 150°C, making it suitable for harsh environments.

This MOSFET is constructed with a single transistor element per chip.

The maximum drain-source resistance (Rds(on)) for this model is 1.4 Ohms, which reduces conduction losses.

It is suitable for applications including high-voltage switching, motor drives, and power conversion circuits.

This model complies with RoHS 2002/95/EC and IEC 61249-2-21 standards for environmental safety.

The configuration of this MOSFET is single N-channel.

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