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Vishay TrenchFET N-Channel Power MOSFET 5.3 A 60 V Enhancement Mode 8-Pin SO-8 SI4900DY-T1-E3

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 1.35mm
Length 4.8mm
Model SI4900DY-T1-E3
Width 4mm
Mount Type Surface
Series TrenchFET
Maximum Operating Temperature 150°C
Package Type SO-8
Minimum Operating Temperature -55°C
Standards/Approvals IEC 61249-2-21
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 5.3A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 0.058Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 3.1W
Typical Gate Charge Qg @ Vgs 13nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Offers a maximum continuous drain current of 5.3 A.
  • Designed with a drain-source voltage rating of 60 V for robust operation.
  • Utilizes enhancement mode channel technology for efficient switching.
  • Features a low drain-source resistance of 0.058 ohms to minimize conduction losses.
  • Supports a gate-source voltage up to 20 V for versatile drive options.
  • Typical gate charge of 13 nC at Vgs supports fast switching speeds.
  • Maximum power dissipation of 3.1 W ensures reliable thermal performance.
  • Operating temperature range from -55°C to 150°C suits demanding environments.

Product Description

Vishay SI4900DY-T1-E3 is a high-performance TrenchFET N-Channel power MOSFET designed for efficient power switching applications requiring moderate current and voltage ratings. With a continuous drain current of 5.3 A and a drain-source voltage of 60 V, it is well suited for use in LCD TVs, CCFL inverters, and other power management circuits.

This device features enhancement-mode channel technology which improves switching efficiency and reduces conduction losses. The low on-resistance of 0.058 ohms contributes to reduced heat dissipation and increased overall system reliability. It supports a maximum gate-source voltage of 20 V and has a typical gate charge of 13 nC at Vgs, enabling rapid switching suitable for power converter designs.

The MOSFET is housed in a compact 8-pin SO-8 surface-mount package with dimensions 4.8 mm length, 4 mm width, and 1.35 mm height, easing circuit board design constraints. It operates reliably over a wide temperature range from -55°C to 150°C, making it adaptable to various industrial and consumer electronics environments.

Environmental standards compliance includes Pb-free and halogen-free construction, alongside IEC 61249-2-21 certification, making it suitable for eco-conscious manufacturing processes.

This Power MOSFET is ideal for industrial, consumer electronics, and HVAC power control applications where space and thermal efficiency are critical. The device balances robust electrical performance with compliance to international environmental standards.

Offers a maximum continuous drain current of 5.3 A. Designed with a drain-source voltage rating of 60 V for robust operation. Utilizes enhancement mode channel technology for efficient switching. Features a low drain-source resistance of 0.058 ohms to minimize conduction losses.

Supports a gate-source voltage up to 20 V for versatile drive options. Typical gate charge of 13 nC at Vgs supports fast switching speeds. Maximum power dissipation of 3.1 W ensures reliable thermal performance. Operating temperature range from -55°C to 150°C suits demanding environments.

Compact SO-8 surface-mount package with 8 pins for easy PCB integration. Complies with IEC 61249-2-21 and is halogen and Pb-free for environmental compliance. Explore the extensive range of Vishay semiconductors and power components at EnvMart for reliable industrial and commercial solutions.

Vishay TrenchFET N-Channel Power MOSFET 5.3 A 60 V Enhancement Mode 8-Pin SO-8 SI4900DY-T1-E3
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Frequently Asked Questions

The maximum continuous drain current for this model is 5.3 A.

It has a drain-source voltage rating of 60 V.

The device features a low drain-source resistance of 0.058 ohms.

It supports a maximum gate-source voltage of 20 V.

The typical gate charge is 13 nC at Vgs.

The maximum power dissipation is 3.1 W.

The dimensions of the SO-8 package are 4.8 mm in length, 4 mm in width, and 1.35 mm in height.

It operates reliably over a temperature range from -55°C to 150°C.

This model uses surface mount technology.

It complies with IEC 61249-2-21 and is halogen and Pb-free.

This power MOSFET is suitable for use in LCD TVs, CCFL inverters, and other power management circuits.

It utilizes an N-channel configuration with enhancement mode technology.

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