Infineon HEXFET Type P-Channel MOSFET 4.3 A 12 V Enhancement 3-Pin Micro IRLML6401TRPBF

Infineon IRLML6401TRPBF is a HEXFET Series P-Channel MOSFET designed for efficient power management with a maximum continuous drain current of 4.3 A and 12 V drain source voltage. Featuring enhancement mode operation and housed in a compact 3-pin Micro SOT-23 surface mount package, it is engineered to deliver performance in demanding industrial and electronic applications.

This MOSFET employs advanced processing techniques to achieve very low on-resistance, minimizing power losses and heat generation, which enhances overall circuit efficiency. It can dissipate up to 1.3 W of power continuously, making it suitable for medium power handling requirements.

With an operating temperature range from -55°C up to 150°C, IRLML6401TRPBF maintains functionality and reliability even in high-temperature environments. The device's fast switching capability makes it appropriate for applications where quick transitions between on and off states are critical to reducing energy loss.

The compact Micro SOT-23 package contributes to space-efficient circuit board designs, commonly required in portable electronics and compact automation systems. Typical uses include battery and load management, power management in PCMCIA cards, and various electronic control circuits.

Features include:. Very low on-resistance. Maximum drain source voltage 12 V. Continuous drain current capability of 4.3 A. High junction temperature tolerance up to 150°C. Fast switching optimized for efficiency. Compact surface mount package for minimal footprint.

For industrial, laboratory, automation, and consumer electronic applications requiring reliable MOSFET performance and compact design, Infineon IRLML6401TRPBF is a suitable choice. Explore more semiconductor solutions with EnvMart.