onsemi NTHL N-Channel MOSFET, 65 A, 650 V, Enhancement Mode, 3-Pin TO-247 Package NTHL040N65S3F

onsemi NTHL040N65S3F N-Channel MOSFET is part of the SUPERFET III high voltage super-junction MOSFET family engineered for industrial and commercial power electronics applications. This device supports a maximum continuous drain current of 65 amperes and a maximum drain-source voltage of 650 volts in an enhancement mode channel type. Packaged in a 3-pin TO-247 form factor, it facilitates efficient through-hole mounting in power circuits.

Utilizing charge balance technology, this MOSFET offers outstanding low on-resistance and reduced gate charge, minimizing conduction losses and enhancing switching efficiency. It features a maximum RDS(on) resistance of 32 milliohms and an ultra low typical gate charge of 158 nanocoulombs at Vgs. The device operates reliably across a wide temperature range from -55°C to 150°C, making it ideal for demanding environments.

The MOSFET excels in body diode performance, characterized by low reverse recovery charge (Qrr) and robust diode behavior, which improves overall system efficiency. With a maximum power dissipation rating of 446 watts, it supports high power applications including telecommunications power supplies, cloud system power management, electric vehicle chargers, solar inverters, and uninterruptible power supplies (UPS).

Physically, the component measures approximately 20.82 mm in height, 15.87 mm in length, and 4.82 mm in width, conforming to the standard TO-247 footprint suitable for legacy and modern power electronic assemblies. The device's maximum gate-source voltage rating is ±30 volts with a forward voltage drop around 1.3 volts, balancing switching performance with durability.

This MOSFET is manufactured in China and does not carry additional standards or automotive certifications. It provides a reliable solution where low switching losses, high voltage capacity, and thermal robustness are critical for industrial, laboratory, and commercial power electronics designs.

Features ultra low gate charge for reduced switching losses. Designed with charge balance technology for low on-resistance. Optimized for superior switching performance and high reliability. Wide operating temperature range suitable for harsh environments.

Robust body diode with low reverse recovery charge. High power dissipation capability. Standard TO-247 package for versatile mounting options. Ideal for telecom, EV charging, solar, and server power supplies. Explore the comprehensive range of MOSFETs and power electronics components at EnvMart to find suitable parts for your industrial or commercial applications.