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DiodesZetex P-Channel MOSFET Type Enhancement, 450 mA, 60 V, 4-Pin SOT-223 ZVP2106GTA

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DiodesZetex P-Channel MOSFET Type Enhancement, 450 mA, 60 V, 4-Pin SOT-223 ZVP2106GTA

Name: DiodesZetex P-Channel MOSFET Type Enhancement, 450 mA, 60 V, 4-Pin SOT-223 ZVP2106GTA
Brand: DiodesZetex
SKU: 151256
Price: 0.85 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.65mm
Length	6.7mm
Model	ZVP2106GTA
Width	3.7mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Automotive Standard	AEC-Q100, AEC-Q200, AEC-Q104, AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	450mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	200mW
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	720mV
Transistor, MOSFET, P Channel, SMT, BSP316Brand	Infineon

Key Features

Offers maximum continuous drain current of 450 mA.
Rated for maximum drain-source voltage of 60 V.
Features enhancement mode channel type for switching applications.
Compact SOT-223 surface mount package with 4 pins.
Maximum power dissipation is 200 mW for efficient thermal performance.
Wide operating temperature range from -55°C to 150°C.
Maximum drain-source resistance of 5 ohms ensures low conduction losses.
Gate-source voltage range of -20 V to +20 V for versatile gate drive.

Product Description

DiodesZetex ZVP2106GTA is a P-Channel Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) designed for efficient switching and amplification in electronic circuits. Rated for a maximum continuous drain current of 450 mA and a maximum drain-source voltage of 60 V, it operates in enhancement mode ensuring controlled conduction.

Housed in a compact 4-pin SOT-223 surface mount package, this MOSFET provides reliable electrical performance with a maximum power dissipation of 200 mW. It has a low drain-source resistance of up to 5 ohms, which reduces conduction losses, making it suitable for low-power applications.

The device is engineered to withstand harsh conditions with an operating temperature range from -55°C to 150°C, suitable for automotive and industrial environments. It supports a gate-source voltage from -20 V to +20 V, enabling wide control flexibility. The forward voltage is 720 mV, ensuring efficient switching.

The ZVP2106GTA meets stringent automotive standards including AEC-Q100, AEC-Q200, AEC-Q104, and AEC-Q101, further assuring quality and robustness. Maximum continuous drain current of 450 mA. Maximum drain-source voltage: 60 V.

Enhancement type P-Channel MOSFET for switching. Compact 4-pin SOT-223 surface mount package. Maximum power dissipation of 200 mW. Operating temperature from -55°C to 150°C. Drain-source resistance up to 5 Ω. Gate-source voltage range -20 V to +20 V.

Forward voltage of 720 mV. Conforms to automotive standards AEC-Q100, AEC-Q200, AEC-Q104, AEC-Q101.

This MOSFET is ideal for use in automotive applications, consumer electronics, and industrial electronic circuits requiring reliable low-power switching components. Its surface mount design aids in compact PCB layouts and automated assembly processes.

Explore the Electronics & Electricals category for more semiconductors and discrete components at EnvMart.