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onsemi N-Channel MOSFET, 44 A, 650 V, Enhancement Mode, 3-Pin TO-247 Package FCH067N65S3-F155

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onsemi N-Channel MOSFET, 44 A, 650 V, Enhancement Mode, 3-Pin TO-247 Package FCH067N65S3-F155

Name: onsemi N-Channel MOSFET, 44 A, 650 V, Enhancement Mode, 3-Pin TO-247 Package FCH067N65S3-F155
Brand: onsemi
SKU: 151077
Price: 5.9 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	20.82mm
Length	15.87mm
Model	FCH067N65S3-F155
Width	4.82mm
Mount Type	Through Hole
Series	FCH067N65S3
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	44A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	67mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	312W
Typical Gate Charge Qg @ Vgs	78nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V

Key Features

Features low on-resistance of 67mΩ for efficient conduction.
Supports maximum power dissipation of 312 W.
Operates reliably between -55°C and 150°C.
Typical gate charge is low at 78 nC to minimize switching losses.
Maximum gate-source voltage is 30 V for robust control.
Compact dimensions with height 20.82 mm, length 15.87 mm, and width 4.82 mm.
Designed for through hole mounting, suitable for power applications.
Forward voltage drop is typically 1.2 V for efficient operation.

Product Description

onsemi's FCH067N65S3-F155 is a SuperFET III N-Channel MOSFET tailored for high voltage power switching applications. With a maximum continuous drain current of 44 A and a drain-source voltage rating of 650 V, this MOSFET offers reliable performance in demanding environments. The device features enhancement mode operation and a 3-pin TO-247 package that supports through hole mounting.

This MOSFET's advanced charge balance technology provides outstanding low on-resistance of 67 milliohms and ultra-low gate charge, reducing conduction and switching losses significantly. The device can dissipate up to 312 W of power and operates across a wide temperature range from -55°C up to 150°C.

With dimensions of 20.82 mm height, 15.87 mm length, and 4.82 mm width, it fits compact power systems designed for industrial, computing, telecom, solar inverter, UPS, and EV applications. The maximum gate-source voltage rating of 30 V and typical forward voltage of 1.2 V ensure robust switching control and efficient conduction.

This product is manufactured in China and does not comply with automotive standards. It offers excellent reliability in power electronics requiring miniaturization and higher efficiency.

Low on-resistance minimizes conduction loss. Low typical gate charge reduces switching losses. Wide operating temperature range enhances reliability. High power dissipation capability supports demanding loads. Compact TO-247 package for through hole mounting.

Enhanced switching performance with optimized capacitance. Suitable for industrial, telecom, solar, computing, and EV power systems.

Choose onsemi FCH067N65S3-F155 MOSFET for high-efficiency, high-voltage switching solutions. Explore more MOSFETs and semiconductor components in the EnvMart Electronics & Electricals category.