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Toshiba N-Channel MOSFET 60 A 60 V Enhancement Mode 3-Pin TO-252 TK60S06K3L
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | TK60S06K3L |
| Width | 7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 12.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 88W |
| Typical Gate Charge Qg @ Vgs | 60nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- High continuous drain current of 60 A suitable for power applications.
- Drain source voltage rating of 60 V for robust operation.
- Encapsulated in a compact 3-pin TO-252 surface mount package.
- Low drain-source on-resistance of 6.4 mΩ at VGS = 10 V improves efficiency.
- Can operate in temperatures ranging from -55°C to 175°C.
- Typical gate charge of 60 nC maximizes switching performance.
- Enhancement mode transistor with threshold voltage between 2.0 to 3.0 V.
- Forward voltage of -1.2 V ensures effective conduction.
Product Description
Toshiba TK60S06K3L is a high-performance N-Channel MOSFET designed for reliable and efficient switching in power electronic applications. The device supports a maximum continuous drain current of 60 A and a drain-source voltage of 60 V, making it suitable for automotive, industrial, and consumer electronics.
Featuring a surface mount TO-252 package with 3 pins, this MOSFET provides enhanced thermal performance and compact packaging for high-density circuit designs. Its enhancement mode operation and threshold voltage range of 2.0 to 3.0 V ensure precise switching control.
The device offers a low drain-source on-resistance of 6.4 mΩ typ at a gate-source voltage of 10 V, which reduces conduction losses and improves system efficiency. The typical gate charge of 60 nC at VGS optimizes switching speeds for power management.
Operating temperature ranges from -55°C to 175°C accommodate harsh environments including automotive and industrial applications. The TK60S06K3L also meets the automotive AEC-Q101 qualification standard, ensuring durability and quality.
High continuous drain current of 60 A suitable for power applications. Drain source voltage rating of 60 V for robust operation. TO-252 3-pin surface mount package for efficient thermal management. Low RDS(on) of 6.4 mΩ typical at VGS = 10 V.
Typical gate charge of 60 nC for fast switching. Operates between -55°C to 175°C ambient temperature. Enhancement mode, with Vth between 2.0 to 3.0 V. Forward voltage drop of -1.2 V to minimize conduction losses. Compliance with AEC-Q101 automotive standards.
Manufactured in Japan ensuring reliable quality.
This MOSFET is ideal for use in automotive electronics, motor drivers, DC-DC converters, switching voltage regulators, and other power management applications. It provides a robust solution with enhanced switching performance and thermal endurance in demanding environments.
Explore more in the MOSFET category at EnvMart to find compatible power semiconductors and electronic components.
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Frequently Asked Questions
The maximum continuous drain current of the Toshiba TK60S06K3L is 60 A, making it suitable for power applications.
This model has a drain-source voltage rating of 60 V, ensuring robust operation in various applications.
The typical drain-source on-resistance is 6.4 mΩ at a gate-source voltage of 10 V, which helps improve efficiency.
It can operate in temperatures ranging from -55°C to 175°C, accommodating harsh environments.
The typical gate charge is 60 nC, which optimizes switching performance in power management applications.
The dimensions of the TO-252 package are 6.5 mm in length, 7 mm in width, and 2.3 mm in height.
It complies with the AEC-Q101 automotive standard, ensuring quality and reliability for automotive applications.
The threshold voltage for this enhancement mode transistor is between 2.0 to 3.0 V, allowing for precise switching control.
The forward voltage drop is -1.2 V, which minimizes conduction losses during operation.
The maximum power dissipation rating for this model is 88 W, suitable for high-performance applications.
This model uses a surface mount type, which enhances thermal performance and is suitable for high-density circuit designs.
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