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Toshiba N-Channel MOSFET 300 mA 60 V Surface Mount 6-Pin US6 Package SSM6N7002KFU,LF(T

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Toshiba N-Channel MOSFET 300 mA 60 V Surface Mount 6-Pin US6 Package SSM6N7002KFU,LF(T

Name: Toshiba N-Channel MOSFET 300 mA 60 V Surface Mount 6-Pin US6 Package SSM6N7002KFU,LF(T
Brand: Toshiba
SKU: 239960
Price: 0.07 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	India
Brand	Toshiba
Height	900μm
Length	2.1mm
Model	SSM6N7002KFU,LF(T
Width	2mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	US6
Minimum Operating Temperature	-55°C
Pin Count	6
Channel Type	N
Maximum Continuous Drain Current Id	300mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	1.2mΩ
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	0.39nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	-0.79V

Key Features

Surface mount package with compact 6-pin US6 footprint for PCB integration.
Maximum drain-source resistance of 1.2 milliohms ensures low conduction losses.
Typical gate charge of 0.39 nanocoulombs for fast switching performance.
Power dissipation rating of 500 mW with wide operating temperature from -55°C to 150°C.
Gate-source voltage maximum of 20 V supports robust control signals.
Small form factor dimensions measuring 2.1 mm length, 2 mm width, and 900 µm height.
Forward voltage of -0.79 V indicating efficient conduction behavior.
Designed for high speed switching and low power loss in electronic devices.

Product Description

Toshiba SSM6N7002KFU,LF(T is an N-Channel MOSFET semiconductor device designed for surface mounting applications with a compact 6-pin US6 package. It features a maximum continuous drain current of 300 milliamperes and a maximum drain-source voltage of 60 volts, suitable for various electronic and power management implementations.

The MOSFET utilizes silicon material with low drain-source resistance (Rds) of 1.2 milliohms, enabling efficient switching with minimal power loss. Its typical gate charge (Qg) of 0.39 nanocoulombs at Vgs contributes to fast switching speeds, supporting high-frequency operation.

With a power dissipation capability of up to 500 milliwatts and an operating temperature range from -55°C to 150°C, this device is robust for industrial and consumer electronics environments. The package size features a length of 2.1 mm, width of 2.0 mm, and height of 900 micrometers, allowing compact PCB designs.

The maximum gate-source voltage rating of 20 V and a forward voltage of -0.79 V further enhance its reliable switching characteristics. This MOSFET is ideal for high speed switching applications in electronics, power supplies, signal amplifiers, and other semiconductor uses within industrial, laboratory, and manufacturing settings.

Surface mount package with compact 6-pin US6 footprint for PCB integration. Maximum drain-source resistance of 1.2 milliohms ensures low conduction losses. Typical gate charge of 0.39 nanocoulombs for fast switching performance.

Power dissipation rating of 500 mW with wide operating temperature from -55°C to 150°C. Gate-source voltage maximum of 20 V supports robust control signals. Small form factor dimensions measuring 2.1 mm length, 2 mm width, and 900 µm height.

Forward voltage of -0.79 V indicating efficient conduction behavior. Designed for high speed switching and low power loss in electronic devices.

This Toshiba MOSFET model SSM6N7002KFU,LF(T is suitable for discrete semiconductor product lines and is commonly used in electronic components assemblies requiring efficient and compact power switching solutions.

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