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DiodesZetex NPN Bipolar Transistor 2.5 A 20 V 3-Pin SOT-23 FMMT618TA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 2.5mm
Length 3mm
Model FMMT618TA
Width 1.2mm
Mount Type Surface
Series FMMT618
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 20V
Minimum DC Current Gain hFE 300
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 20V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 2.5A
Transistor Configuration Single
Maximum Transition Frequency ft 140MHz

Key Features

  • This transistor is housed in a compact 3-pin SOT-23 surface mount package.
  • It features a single transistor configuration suitable for general purpose applications.
  • Maximum power dissipation is rated at 625 mW for efficient thermal management.
  • Designed with a high minimum DC current gain (hFE) of 300 for reliable amplification.
  • Operates within a temperature range of -55°C to 150°C ensuring durability in harsh environments.
  • Maximum transition frequency of 140 MHz supports high-speed switching and signal amplification.
  • Complies with automotive standard AEC-Q101 for automotive electronics reliability.
  • Pin count of three enables compact PCB designs and easy integration.

Product Description

DiodesZetex FMMT618TA is a general purpose NPN bipolar transistor designed for electronic circuits requiring reliable switching and amplification with a collector current up to 2.5 A and a collector-emitter voltage of 20 V. It is housed in a compact 3-pin SOT-23 package suitable for space-constrained surface mount applications.

The transistor features a single transistor configuration with a high minimum DC current gain (hFE) of 300, ensuring efficient current amplification. Its maximum power dissipation of 625 mW allows sustained operation without excessive heat buildup, supported by its compact package with dimensions 3 mm length, 2.5 mm height, and 1.2 mm width.

Operation is guaranteed over a wide temperature range from -55°C to 150°C, making this component suitable for automotive and industrial environments. The device supports high-frequency operation with a maximum transition frequency of 140 MHz, beneficial for radio frequency and switching circuits.

Compliance with the AEC-Q101 automotive standard ensures high reliability and quality needed for automotive electronic systems. The package’s small footprint and three-pin structure enable efficient PCB layout and assembly in compact electronic devices.

This transistor is built to provide robust performance in industrial, automotive, and general electronics applications. Ideal for use in power control, signal amplification, and switching circuits. Offers consistent performance across a broad temperature range and meets automotive reliability standards.

The small SOT-23 package allows for flexible PCB designs in modern electronic equipment. Explore more Bipolar Transistors and semiconductor components in the Electronics & Electricals category on EnvMart for your industrial and commercial needs.

DiodesZetex NPN Bipolar Transistor 2.5 A 20 V 3-Pin SOT-23 FMMT618TA
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Frequently Asked Questions

The maximum DC collector current for this transistor is 2.5 A.

The maximum collector-emitter voltage (Vceo) for this model is 20 V.

It has a maximum power dissipation rating of 625 mW.

The minimum DC current gain (hFE) is rated at 300.

This model operates within a temperature range of -55°C to 150°C.

The maximum transition frequency for this transistor is 140 MHz.

It is housed in a compact 3-pin SOT-23 surface mount package.

The dimensions are 2.5 mm in height, 3 mm in length, and 1.2 mm in width.

This transistor complies with the AEC-Q101 automotive standard.

It features a single transistor configuration suitable for general-purpose applications.

The maximum emitter-base voltage (VEBO) is 5 V.

The country of origin for this transistor is India.

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