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Nexperia PNP Transistor , 100 mA Max Collector Current, -30 V Collector Emitter Voltage, TO-236 Package, Surface BC859C,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model BC859C,215
Width 1.4mm
Mount Type Surface
Series BC859
Maximum Operating Temperature 150°C
Package Type TO-236
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -30V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -30V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
PNP transistor in a SOT323 plastic package. NPN complements BC846W, BC847W and BC848W
ROHM BC858BHZGT116 Bipolar Transistor, 100 mA PNP, -30 V, 3-Pin SOT-23Brand ROHM

Key Features

  • The transistor features a compact 3-pin TO-236 surface-mount package.
  • Maximum power dissipation is rated at 250 mW ensuring reliable operation under moderate load.
  • Minimum DC current gain (hFE) of 220 offers efficient amplification capabilities.
  • Transistor polarity is PNP, ideal for complementary circuit design with matching NPN transistors BC846W, BC847W, and BC848W.
  • Operating temperature range from -65°C to 150°C enhances suitability for varied industrial environments.
  • Low noise figure (max 4 dB) benefits audio and sensor amplification circuits.
  • Pin count is 3 with a small plastic SOT323 style body conforming to modern PCB layouts.

Product Description

Nexperia BC859C,215 PNP Transistor offers reliable switching and amplification performance with a maximum collector current of 100 mA and collector emitter voltage of -30 V. It comes housed in a compact TO-236 surface-mount package, designed for space-efficient PCB integration.

With a maximum power dissipation of 250 mW and a minimum DC current gain of 220, this transistor is well-suited for industrial, audio, sensor amplification, and general-purpose switching applications. Its low noise figure of maximum 4 dB makes it particularly effective in noise-sensitive circuits.

The transistor operates over a wide temperature range from -65°C to 150°C, ensuring dependable function in harsh environments. It has a 3-pin configuration, typical for single bipolar transistors, and is part of the BC859 series.

Complementary NPN transistors in the series include BC846W, BC847W, and BC848W, facilitating design flexibility. The device supports mounting on surface-mount technology (SMT) PCBs with its TO-236 package style.

The transistor features a compact 3-pin TO-236 surface-mount package. Maximum power dissipation is rated at 250 mW ensuring reliable operation under moderate load. Minimum DC current gain (hFE) of 220 offers efficient amplification capabilities.

Transistor polarity is PNP, ideal for complementary circuit design with matching NPN transistors BC846W, BC847W, and BC848W. Operating temperature range from -65°C to 150°C enhances suitability for varied industrial environments.

Low noise figure benefits audio and sensor amplification circuits. Pin count is 3 with a small plastic SOT323 style body conforming to modern PCB layouts.

This transistor is ideal for use in industrial electronics, audio and sensor amplification, general-purpose switching, and low current applications typically found in control circuitry and electronic instruments.

Browse more Bipolar Transistors and related semiconductor components in the Electronics & Electricals category on EnvMart to find complementary devices and accessories.

Nexperia PNP Transistor , 100 mA Max Collector Current, -30 V Collector Emitter Voltage, TO-236 Package, Surface BC859C,215
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Frequently Asked Questions

The maximum collector current for this PNP transistor is 100 mA.

The collector-emitter voltage rating is -30 V.

The maximum power dissipation is rated at 250 mW.

The minimum DC current gain (hFE) is 220.

The operating temperature range is from -65°C to 150°C.

This transistor comes in a TO-236 surface-mount package.

It has a 3-pin configuration.

The complementary NPN transistors are BC846W, BC847W, and BC848W.

The height is 1.1 mm, the length is 3 mm, and the width is 1.4 mm.

The maximum emitter-base voltage (VEBO) is -5 V.

This transistor is suitable for industrial electronics, audio and sensor amplification, and general-purpose switching applications.

The country of origin for this transistor is India.

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