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STMicroelectronics High Voltage 1.5 A NPN Bipolar Transistor 400 V, 1.6 W Power Dissipation, 4-Pin SOT-223 Package STN83003

Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 1.9mm
Length 6.7mm
Model STN83003
Width 7mm
Mount Type Surface
Series STN83003
Maximum Operating Temperature 150°C
Package Type SOT-223
Pin Count 4
Maximum Collector Emitter Voltage Vceo 400V
Minimum DC Current Gain hFE 4
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 12V
Maximum Power Dissipation Pd 1.6W
Maximum DC Collector Current Idc 1.5A
Transistor Configuration Single
onsemi NSV40301MZ4G NPN Transistor, 3 A, 40 V, 3 + Tab-Pin SOT-223Brand ON Semiconductor

Key Features

  • Maximum DC collector current of 1.5 amperes.
  • Collector-Emitter voltage rating up to 400 volts.
  • Single transistor configuration with NPN polarity.
  • Maximum power dissipation of 1.6 watts.
  • Surface mount package type SOT-223 with four pins.
  • Maximum emitter-base voltage of 12 volts to ensure reliability.
  • Minimum DC current gain (hFE) of 4 for switching applications.
  • Operating temperature up to 150 degrees Celsius for industrial environments.

Product Description

STMicroelectronics STN83003 is a high voltage, NPN bipolar transistor designed for use in industrial and electronic applications requiring reliable switching at elevated voltages and currents. Rated for a maximum DC collector current of 1.5 A and a maximum collector-emitter voltage of 400 V, it operates within a compact 4-pin SOT-223 surface mount package that facilitates high-density PCB layouts.

This transistor features a maximum power dissipation of 1.6 W and a minimum DC current gain of 4, making it suitable for general-purpose switching and amplification tasks. Its emitter-base voltage rating of 12 V and maximum operating temperature of 150°C ensure durable performance under demanding conditions.

The STN83003 is extensively used in electronic circuits where high voltage control is crucial, including power management modules, industrial drivers, and automation systems. Its compact dimensions (6.7 mm length, 7 mm width, and 1.9 mm height) make it ideal for use in surface-mount technology assemblies.

Key features include its single transistor NPN configuration, surface mount compatibility, and ability to handle moderate power dissipation, making it a versatile component in the semiconductor discrete transistor category.

Maximum DC collector current of 1.5 amperes. Collector-Emitter voltage rating up to 400 volts. Single transistor configuration with NPN polarity. Maximum power dissipation of 1.6 watts. Surface mount package type SOT-223 with four pins.

Maximum emitter-base voltage of 12 volts to ensure reliability. Minimum DC current gain (hFE) of 4 for switching applications. Compact dimensions: 6.7 mm length, 7 mm width, and 1.9 mm height. Operating temperature up to 150 degrees Celsius for industrial environments.

Designed for high voltage applications requiring robust switching performance.

STMicroelectronics products like the STN83003 transistor support a wide range of industrial, laboratory, and electronic manufacturing applications, emphasizing efficiency and durability. Explore more in the Bipolar Transistors category for complementary components.

STMicroelectronics High Voltage 1.5 A NPN Bipolar Transistor 400 V, 1.6 W Power Dissipation, 4-Pin SOT-223 Package STN83003
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Frequently Asked Questions

The maximum DC collector current of the STN83003 is 1.5 amperes.

This model has a collector-emitter voltage rating of up to 400 volts.

The STN83003 comes in a SOT-223 package type with four pins.

It has a maximum power dissipation of 1.6 watts.

The maximum operating temperature for the STN83003 is 150 degrees Celsius.

The minimum DC current gain (hFE) for this model is 4, making it suitable for switching applications.

The maximum emitter-base voltage (VEBO) rating is 12 volts.

This model has dimensions of 6.7 mm in length, 7 mm in width, and 1.9 mm in height.

The STN83003 features a single transistor configuration with NPN polarity.

It is commonly used in electronic circuits requiring high voltage control, including power management modules and industrial drivers.

The country of origin for this transistor is India.

This model is designed for surface mounting.

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