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Infineon HEXFET N-Channel MOSFET 75 V 246 A TO-263 3-Pin Enhancement IRFS7730TRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRFS7730TRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 246A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 2.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 271nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- High current capacity of 246 A for demanding power applications.
- Maximum drain-source voltage of 75 V for robust operation.
- Surface mount TO-263 package with 3 pins for easy PCB integration.
- Enhancement mode channel ensures efficient switching performance.
- Low typical gate charge of 271 nC to reduce driving power loss.
- Maximum power dissipation rating of 375 W for thermal resilience.
- Wide operating temperature range from -55°C to 175°C for industrial environments.
- Low maximum drain-source resistance of 2.6 mΩ to improve efficiency.
Product Description
Infineon's IRFS7730TRLPBF is a HEXFET N-Channel MOSFET designed for high-current and low-voltage power switching applications. Featuring a maximum continuous drain current of 246 A and a drain-source voltage rating of 75 V, this MOSFET comes in a compact TO-263 surface mount package with 3 pins. Its enhancement mode channel and low Rds(on) provide efficient switching capability ideal for industrial and power management applications.
Manufactured with robust StrongIRFET technology, the IRFS7730TRLPBF delivers excellent gate, avalanche, and dynamic dv/dt ruggedness, making it suitable for power tools, motor drives, battery management, and inverter systems. It supports a wide operating temperature range of -55°C to 175°C ensuring reliability in harsh industrial environments.
The device offers a maximum power dissipation of 375 W and a typical gate charge of 271 nC at Vgs, which helps minimize gate driving losses. With a low maximum drain-source resistance of 2.6 mΩ, it enables high efficiency in power conversion applications. The 3-pin TO-263 package simplifies surface mounting on PCBs in compact electronic designs.
High current capability of 246 A continuous drain current. 75 V maximum drain-source voltage rating. Low Rds(on) of 2.6 milliohms reduces conduction losses. StrongIRFET technology enhances ruggedness and durability. Wide temperature range from -55°C up to 175°C operation.
Maximum power dissipation of 375 W supports high power loads. Typical gate charge of 271 nC improves switching performance. 3-pin TO-263 package with surface mount design. Suitable for industrial, automotive (non-qualified), and power management applications.
Forward voltage drop of 1.2 V minimizes energy loss.
Infineon's IRFS7730TRLPBF is an ideal MOSFET for industrial power electronics, including motor drives, power tools, inverters, and battery management systems, providing robust performance and energy efficiency. Explore more semiconductor components on EnvMart for reliable power management solutions.
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Frequently Asked Questions
The maximum continuous drain current of the IRFS7730TRLPBF is 246 A, making it suitable for high-current applications.
This MOSFET has a maximum drain-source voltage rating of 75 V, allowing for robust operation in various applications.
It comes in a TO-263 surface mount package with 3 pins, facilitating easy integration onto PCBs.
This model operates within a wide temperature range from -55°C to 175°C, suitable for harsh industrial environments.
The maximum power dissipation rating for this MOSFET is 375 W, supporting high power loads effectively.
The typical gate charge at Vgs is 271 nC, which helps to minimize gate driving losses during operation.
The maximum drain-source resistance (Rds(on)) is 2.6 mΩ, which improves efficiency in power conversion applications.
It features an enhancement mode N-channel, which ensures efficient switching performance in power applications.
The forward voltage drop is 1.2 V, which helps to minimize energy loss during operation.
The dimensions of the TO-263 package are 4.83 mm in height, 10.67 mm in length, and 9.65 mm in width.
This MOSFET is ideal for applications such as motor drives, power tools, inverters, and battery management systems.
The maximum gate-source voltage (Vgs) is -20V to +20V, allowing for flexible control in various circuits.
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