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Infineon HEXFET Type P-Channel MOSFET, 7.2 A, 20 V Enhancement, 6-Pin PQFN IRLHS2242TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 950μm |
| Length | 2.1mm |
| Model | IRLHS2242TRPBF |
| Width | 2.1mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 7.2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 53mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 9.6W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET features a low on-resistance of 53 milliohms which reduces conduction losses.
- Its compact 6-pin PQFN surface mount package optimises PCB space usage.
- Supports operation in temperatures ranging from -55°C to +150°C, suitable for harsh environments.
- Offers 9.6 W maximum power dissipation for robust performance in power management circuits.
- Enhancement mode channel allows versatile circuit design and control.
- Typical gate charge of 12 nC ensures fast switching capabilities ideal for high-frequency operation.
- Maximum gate to source voltage rating is ±12 V, providing reliable gate protection.
- Recommended for system/load switching, battery charging/discharging, and compact electronic device power control.
Product Description
Infineon IRLHS2242TRPBF HEXFET Type P-Channel MOSFET is engineered for high-efficiency power switching in compact electronic systems. This surface mount device supports a maximum continuous drain current of 7.2 A and withstands drain-source voltages up to 20 V. Its HEXFET technology ensures low drain-source resistance of 53 milliohms, minimizing power loss and heat generation during operation.
The device is housed in a low-profile 6-pin PQFN package measuring 2.1 mm in length and width with a height of 950 μm, making it ideal for space-constrained designs. It operates reliably across an extended temperature range from -55°C to +150°C, supporting demanding industrial, automotive (non-certified), and consumer electronics environments.
This MOSFET features enhancement mode channel characteristics with a typical gate charge of 12 nC at 12 V gate-source voltage, enabling fast switching suitable for high-frequency applications. The device can dissipate up to 9.6 W, ensuring durability and thermal stability in power management applications. Forward voltage is -1.2 V, supporting efficient conduction in switching operations.
Low Rds(on) reduces conduction losses and thermal stress. Compact 6-pin surface mount PQFN package for efficient PCB layout. Wide operating temperature range (-55°C to +150°C) enhances reliability. High maximum power dissipation of 9.6 W allows robust usage.
Typical gate charge of 12 nC supports fast switching speeds. Operating voltage range of ±12 V protects the gate from voltage spikes. Applications include automation system load switching and battery management. Suitable for electrical control and power management circuits in compact devices.
Infineon’s HEXFET series offers superior energy efficiency and thermal performance, making the IRLHS2242TRPBF a versatile choice for designing high-performance circuits. Its surface mount form factor integrates seamlessly into modern electronics designs requiring compactness and reliability. Consider this MOSFET for industrial, automotive, and commercial electronics applications.
Explore EnvMart’s Semiconductor and MOSFET product categories for complementary electronic components and specialized power management solutions designed to enhance your projects' efficiency and durability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7.2 A.
It can withstand a maximum drain-source voltage of 20 V.
The on-resistance is 53 milliohms, which helps reduce conduction losses.
The typical gate charge is 12 nC at a gate-source voltage of 12 V.
It operates reliably in temperatures ranging from -55°C to +150°C.
The maximum power dissipation is 9.6 W, allowing for robust performance in power management applications.
The package dimensions are 2.1 mm in length and width, with a height of 950 μm.
This model features an enhancement mode channel type.
The maximum gate-source voltage rating is ±12 V.
It is recommended for applications such as system/load switching and battery charging/discharging.
The forward voltage is -1.2 V, which supports efficient conduction in switching operations.
This model uses a surface mount type for installation.
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