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onsemi P-Channel MOSFET Type BSS84L, 130 mA, 50 V, Enhancement Mode, 3-Pin SOT-23 BSS84L

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onsemi P-Channel MOSFET Type BSS84L, 130 mA, 50 V, Enhancement Mode, 3-Pin SOT-23 BSS84L

Name: onsemi P-Channel MOSFET Type BSS84L, 130 mA, 50 V, Enhancement Mode, 3-Pin SOT-23 BSS84L
Brand: onsemi
SKU: 138675

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	940μm
Length	2.9mm
Model	BSS84L
Width	1.3mm
Mount Type	Surface
Series	BSS84L
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	130mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	10Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	225mW
Typical Gate Charge Qg @ Vgs	2.2nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V

Key Features

P-Channel MOSFET with maximum continuous drain current of 130 mA.
Maximum drain-source voltage rating of 50 V ensures suitability for low voltage applications.
Enhancement mode operation provides reliable switching performance.
Compact SOT-23 surface mount package with 3 pins for easy PCB integration.
Maximum power dissipation of 225 mW allows efficient thermal management.
Wide operating temperature range from -55°C to 150°C for use in harsh environments.
Maximum drain-source resistance (Rds) of 10 ohms for optimized conduction.
Typical gate charge of 2.2 nC at Vgs ensures fast switching capabilities.

Product Description

onsemi BSS84L is a P-Channel Power MOSFET designed for low current, low voltage applications with a maximum continuous drain current of 130 mA and maximum drain-source voltage of 50 V. The device operates in enhancement mode and features a compact 3-pin SOT-23 surface mount package facilitating integration in dense PCB layouts.

This MOSFET supports efficient switching with a low typical gate charge of 2.2 nC at Vgs and maximum drain-source resistance of 10 ohms, resulting in minimal conduction losses. Its power dissipation rating of 225 mW makes it suitable for low power switching scenarios.

The device is capable of operating over a wide temperature range from -55°C to 150°C, making it suitable for industrial and automotive environments. It complies with the automotive standard AEC-Q101, ensuring high reliability and quality for automotive electronics.

Package dimensions are compact, including a length of 2.9 mm, width of 1.3 mm, and height of 940 µm, allowing for space-saving designs on printed circuit boards. P-Channel MOSFET with 130 mA continuous drain current. Maximum drain-source voltage of 50 V suitable for low voltage applications.

Enhancement mode channel operation for effective switching. SOT-23 surface mount package with 3 pins for standard mounting. 225 mW maximum power dissipation supporting efficient thermal management. Operating temperature range from -55°C up to 150°C for diverse environments.

Automotive grade AEC-Q101 certification for dependable automotive use. Compact package size easing PCB space constraints.

This onsemi MOSFET is well suited for electronics projects, industrial automation, automotive systems, power management circuits, and other semiconductor applications requiring a low current P-Channel MOSFET. Browse the extensive MOSFET category on EnvMart for additional compatible discrete semiconductor options from leading manufacturers.