World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

onsemi P-Channel MOSFET 130 mA 50 V Enhancement 3-Pin SOT-23 BSS84LT1G

Free Delivery in India | Lowest Global Shipping Charges

onsemi P-Channel MOSFET 130 mA 50 V Enhancement 3-Pin SOT-23 BSS84LT1G

Name: onsemi P-Channel MOSFET 130 mA 50 V Enhancement 3-Pin SOT-23 BSS84LT1G
Brand: onsemi
SKU: 138648
Price: 0.08 USD
Availability: InStock



Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	940μm
Length	2.9mm
Model	BSS84LT1G
Width	1.3mm
Mount Type	Surface
Series	BSS84L
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	130mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	10Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	225mW
Typical Gate Charge Qg @ Vgs	2.2nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V

Key Features

This MOSFET features an enhancement mode channel for efficient switching performance.
It supports a maximum power dissipation of 225 mW for reliable operation in compact circuits.
Maximum drain-source resistance is 10 Ω ensuring low conduction losses.
The device has a wide operational temperature range from -55°C to 150°C.
The package dimensions measure 2.9 mm length, 1.3 mm width, and 940 μm height for surface mounting.
Typical gate charge at Vgs is 2.2 nC enabling fast switching response.
Maximum gate-source voltage ranges from -20 V to +20 V allowing flexible drive conditions.
Compliance with automotive standard AEC-Q101 supports automotive and industrial applications.

Product Description

onsemi BSS84LT1G P-Channel MOSFET in a 3-Pin SOT-23 package provides a continuous drain current of 130 mA and a maximum drain-source voltage of 50 V. This enhancement-mode device is optimized for efficient power switching in compact, surface-mounted circuits.

The MOSFET's maximum power dissipation rating of 225 mW ensures robust operation in various electronic applications, including automotive, industrial, and consumer electronics. Its low maximum drain-source resistance of 10 Ω reduces power losses during conduction, improving overall circuit efficiency.

Designed for reliability, this device operates over a wide temperature range from -55°C to 150°C. The package dimensions (2.9 mm length, 1.3 mm width, and 940 μm height) facilitate easy integration on printed circuit boards with limited space.

Typical gate charge of 2.2 nC at Vgs allows fast switching performance, while the broad maximum gate-source voltage range from -20 V to +20 V accommodates diverse driving voltages. Compliance with the automotive standard AEC-Q101 demonstrates suitability for demanding automotive system requirements.

This enhancement-mode P-Channel MOSFET delivers reliable switching performance. Supports continuous drain current up to 130 mA with a 50 V drain-source rating. Compact SOT-23 surface-mount package dimensions optimize PCB space usage.

Wide operating temperature range supports automotive and industrial environments. Automotive standard AEC-Q101 certified for high reliability.

This MOSFET is ideal for use in electronic component assemblies for power management, signal switching, and automotive electronic control units. Explore EnvMart's semiconductor category for more Discrete Semiconductor components from trusted brands.