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DiodesZetex N-Channel MOSFET 170 mA, 100 V, Enhancement Mode, 3-Pin SOT-23 BSS123

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BSS123
Width 1.4mm
Mount Type Surface
Series BSS123
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q104, AEC-Q100, AEC-Q101, AEC-Q200
Channel Type N
Maximum Continuous Drain Current Id 170mA
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 10Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 300mW
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • This MOSFET is soldered in a compact 3-Pin SOT-23 package.
  • The device operates in enhancement mode with a maximum power dissipation of 300 mW.
  • High maximum gate-source voltage range of -20 V to +20 V provides versatility.
  • Designed for operation across a wide temperature range from -55°C to +150°C.
  • Low maximum drain-source resistance of 10 Ohms improves efficiency.
  • Forward voltage is rated at 1.3 V, supporting efficient switching applications.
  • Compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height suit dense PCB layouts.
  • Complies with automotive standards AEC-Q104, AEC-Q100, AEC-Q101, and AEC-Q200.

Product Description

DiodesZetex BSS123 is a N-channel MOSFET designed for electronic component applications requiring robust switching at moderate currents and voltages. The BSS123 supports a continuous drain current of up to 170 mA and can withstand a maximum drain-source voltage of 100 V. Packaged in a compact SOT-23 3-pin surface mount case, this transistor is suitable for space-constrained circuit boards.

The device operates in enhancement mode, making it ideal for switching and amplification tasks in low power electronics. It has a maximum power dissipation of 300 mW which enables it to handle typical small signal switching loads efficiently. The gate source voltage tolerance ranges from -20 V to +20 V, allowing it to be driven safely with various control signals.

The BSS123 MOSFET offers a low on-resistance of 10 Ohms minimizing conduction losses. The forward voltage of 1.3 V provides good switching characteristics. This transistor is specified to perform reliably in temperature extremes from -55°C to 150°C, ensuring suitability for automotive, industrial, and consumer electronics environments. It is tested according to automotive standards AEC-Q104, AEC-Q100, AEC-Q101, and AEC-Q200 for enhanced reliability.

The compact physical size with dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height makes it a perfect choice for dense multi-layer printed circuit boards requiring compact but effective switching elements.

This MOSFET is surface mount type with a 3-pin SOT-23 package. Maximum continuous drain current is 170 mA. Maximum drain-source voltage is 100 V. Operating temperature range from -55°C to 150°C ensures durability. Low maximum drain-source resistance of 10 Ω for efficient conduction.

Forward voltage value of 1.3 V supports switching applications. Complies with relevant automotive testing and quality standards. Manufactured in China to international quality standards.

This product is suitable for use in various industrial electronic designs, laboratory setups, HVAC electronics, automotive electronics, manufacturing robotics, and communications devices. DiodesZetex offers this BSS123 model to facilitate efficient and reliable power management in compact systems.

Explore more DiodesZetex semiconductor components and MOSFETs on EnvMart to equip your electronics projects with quality parts designed for performance and longevity.

DiodesZetex N-Channel MOSFET 170 mA, 100 V, Enhancement Mode, 3-Pin SOT-23 BSS123
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Frequently Asked Questions

The maximum continuous drain current for this model is 170 mA.

It has a maximum drain-source voltage rating of 100 V.

The maximum power dissipation for this MOSFET is 300 mW.

This model has dimensions of 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The operating temperature range for this MOSFET is from -55°C to 150°C.

It is packaged in a compact 3-pin SOT-23 surface mount case.

The maximum gate-source voltage for the BSS123 is -20 V to +20 V.

The forward voltage rating for this model is 1.3 V.

This MOSFET complies with automotive standards AEC-Q104, AEC-Q100, AEC-Q101, and AEC-Q200.

The BSS123 is an N-channel MOSFET.

The maximum drain-source resistance is 10 Ohms.

This MOSFET is suitable for various applications including automotive electronics, industrial electronic designs, and communications devices.

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