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DiodesZetex Bridge Rectifier 1000 V 350 A 4-Pin Through Hole GBJ2510-F

Category Bridge Rectifier Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 20.3mm
Length 30.3mm
Model GBJ2510-F
Width 4.8mm
Mount Type Through Hole
Series GBJ
Configuration Single
Maximum Operating Temperature 150°C
Package Type GBJ
Minimum Operating Temperature -65°C
Number of Phases 1
Pin Count 4
Peak Reverse Repetitive Voltage Vrrm 1000V
Peak Reverse Current Ir 500μA
Peak Non-Repetitive Forward Surge Current Ifsm 350A
Forward Current If 25A
Peak Forward Voltage Vf 1.05V

Key Features

  • Designed for single-phase operation with Silicon Bridge Rectifier configuration.
  • Supports continuous forward current of 25 A with low peak forward voltage of 1.05 V.
  • Operates reliably between -65°C and 150°C temperature range.
  • Constructed with glass passivated die for low reverse leakage current and enhanced durability.
  • No automotive standards compliance, suitable for industrial and electronic applications.
  • Manufactured in China with GBJ series package type.

Product Description

DiodesZetex GBJ2510-F Bridge Rectifier is a high-performance single-phase semiconductor device designed for AC to DC conversion in industrial and electronic applications. Featuring a peak reverse repetitive voltage rating of 1000 V and a peak non-repetitive forward surge current capacity of 350 A, it supports demanding power requirements while ensuring durability and efficiency.

This rectifier integrates a glass passivated silicon die with a robust GBJ through-hole package, offering reliable mounting and thermal performance. The forward current rating of 25 A and low forward voltage drop of 1.05 V contribute to efficient power conversion with minimal losses, critical for power supply units, motor drives, and other electronic circuits requiring stable DC output.

Designed to operate across a wide temperature range from -65°C to 150°C, the GBJ2510-F ensures functionality under extreme environmental conditions. Its compact dimensions of 30.3 mm length, 4.8 mm width, and 20.3 mm height facilitate easy incorporation into printed circuit boards (PCBs) and electronic assemblies.

The device is particularly suited for applications in industrial power management, electronic manufacturing, and laboratory setups where high surge currents and voltage protection are essential. Its low reverse leakage current enhances reliability and reduces power loss, contributing to overall system efficiency.

Single-phase bridge rectifier with 4-pin configuration. Peak reverse voltage of 1000 V safeguards circuits from voltage spikes. High peak surge current rating of 350 A for transient handling. Wide operating temperature range from -65°C to 150°C.

Glass passivated die construction for low leakage and long life. Compact GBJ package designed for through-hole mounting. Manufactured in China ensuring industrial grade quality.

This product is a reliable choice for power supply designers and industrial electronics engineers seeking a robust bridge rectifier solution with high voltage and current ratings. Explore more semiconductor components and Bridge Rectifiers in the EnvMart catalog to support your electronic design and manufacturing needs.

DiodesZetex Bridge Rectifier 1000 V 350 A 4-Pin Through Hole GBJ2510-F
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Frequently Asked Questions

The GBJ2510-F has a peak reverse repetitive voltage rating of 1000 V, which protects circuits from voltage spikes.

This model supports a maximum forward current of 25 A, making it suitable for various applications requiring stable DC output.

The peak non-repetitive forward surge current capacity of the GBJ2510-F is 350 A, allowing it to handle transient conditions effectively.

The dimensions of the GBJ2510-F are 30.3 mm in length, 4.8 mm in width, and 20.3 mm in height, facilitating easy integration into PCBs.

It operates reliably within a temperature range of -65°C to 150°C, ensuring functionality under extreme conditions.

This bridge rectifier is designed for through-hole mounting, which allows for secure installation on printed circuit boards.

The forward voltage drop of the GBJ2510-F is 1.05 V, contributing to efficient power conversion with minimal losses.

It features a single-phase configuration, making it suitable for AC to DC conversion in various applications.

The peak reverse current for the GBJ2510-F is 500 μA, which indicates its low reverse leakage current characteristics.

This model is particularly suited for industrial power management, electronic manufacturing, and laboratory setups requiring high surge currents.

It is constructed with a glass passivated silicon die, which enhances durability and reduces reverse leakage current.

The GBJ2510-F is manufactured in China, ensuring industrial-grade quality for various applications.

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