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Infineon HEXFET N-Channel MOSFET 17 A Current 100 V Voltage Enhancement Mode 3-Pin TO-220 IRF530NPBF
Specifications
| Country of Origin | Mexico |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF530NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 70W |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| IRF530NPBF N-Channel MOSFET, 17 A, 100 V HEXFET, 3-Pin TO-220AB InfineonBrand | Infineon |
Key Features
- The MOSFET features low on-resistance of 90mΩ that enhances electrical efficiency.
- It operates in enhancement mode suitable for robust current management.
- Maximum power dissipation is rated at 70 W, supporting high load conditions.
- The device supports a gate-source voltage range from -20 V to +20 V for reliable switching.
- Operating temperature extends from -55°C to 175°C, ensuring performance in harsh environments.
- The package type is TO-220 with through-hole mounting and 3 pins for easy integration.
- Typical gate charge at Vgs is 37 nC, enabling fast switching speeds.
- Maximum pulsed drain current capability is 60 A for transient loads.
Product Description
Infineon IRF530NPBF HEXFET N-Channel MOSFET 3-Pin TO-220 is engineered for high efficiency in power switching applications, supporting a maximum continuous drain current of 17 A and a drain-source voltage rating of 100 V. Its enhancement mode configuration and low on-resistance of 90mΩ contribute to minimal conduction losses and optimal system efficiency.
This Power MOSFET is housed in a robust TO-220AB package, designed for through-hole mounting which facilitates easy installation and effective heat dissipation. It has a maximum power dissipation of 70 W and operates reliably across a broad temperature range from -55°C to +175°C, making it suitable for demanding industrial and commercial environments.
The device supports a gate-source voltage range of -20 V to +20 V, allowing for precise and reliable switching. Its typical gate charge of 37 nC ensures fast switching, reducing energy losses in power control applications. With a maximum pulsed drain current of 60 A, it can withstand transient load spikes without damage.
Applications of the IRF530NPBF include power management in industrial automation, motor control circuits, voltage regulation in power supplies, and use in high-efficiency converters and inverters. It is also suitable for consumer electronics requiring dynamic load support and reliable power control.
It is an essential component for engineers designing power-sensitive and high-efficiency electronic systems. Low on-resistance reduces conduction losses and improves efficiency. High maximum drain current supports demanding load conditions.
Wide operating temperature range ensures durability in harsh environments. Fast switching capabilities minimize energy waste. Robust TO-220 package provides ease of installation and thermal management. Explore more electronic components and power semiconductors in the Infineon series on EnvMart for reliable industrial and electronic applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 A.
It has a maximum drain-source voltage rating of 100 V.
The on-resistance is rated at 90 mΩ, contributing to enhanced electrical efficiency.
The typical gate charge at Vgs is 37 nC, which enables fast switching speeds.
It operates within a temperature range of -55°C to 175°C.
This model is housed in a TO-220 package designed for through-hole mounting.
The maximum power dissipation for this MOSFET is rated at 70 W.
It supports a gate-source voltage range from -20 V to +20 V.
The pin count for this model is 3.
This MOSFET is suitable for power management in industrial automation, motor control circuits, and voltage regulation in power supplies.
The maximum pulsed drain current capability is 60 A, allowing it to handle transient loads.
The height of the TO-220 package is 8.77 mm, and the width is 4.69 mm.
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