$0.60
$0.58
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon HEXFET Type P-Channel MOSFET 19 A 55 V Enhancement 3-Pin TO-220 IRF9Z34NPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF9Z34NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 35nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
| IRF9Z34NPBF P-Channel MOSFET, 19 A, 55 V HEXFET, 3-Pin TO-220AB InfineonBrand | Infineon |
Key Features
- Designed with HEXFET technology for robust power switching performance.
- Maximum power dissipation capacity of 68W for enhanced durability.
- Low gate charge of 35 nC enables fast switching and efficiency.
- Maximum drain-source resistance of 100 mΩ reduces conduction losses.
- Operates efficiently from -55°C up to 175°C temperature range.
- Enhancement mode channel type suitable for various electronic circuits.
- Features 3-pin through-hole mount package for easy circuit integration.
- Supports gate-source voltage variation up to ±20 V for flexible circuit design.
Product Description
Infineon IRF9Z34NPBF is a high-performance HEXFET P-Channel MOSFET delivering a continuous drain current of 19 A and a drain-source voltage rating of 55 V.
This enhancement mode device, housed in a TO-220 package with 3 pins, is engineered for demanding electronic applications that require efficient power switching and reliable thermal management.
Capable of dissipating up to 68 W of power, the MOSFET ensures robust operation even under heavy load, supported by a maximum operating temperature of 175°C. Its low typical gate charge of 35 nC allows fast switching speeds, ideal for high-frequency applications.
The maximum drain-source resistance of 100 mΩ minimizes conduction losses, improving power efficiency. With gate-source voltage tolerance of ±20 V, the device provides design flexibility.
Measuring 10.54 mm in length, 8.77 mm in height, and 4.69 mm in width, the TO-220 package supports through-hole mounting for straightforward PCB integration. This MOSFET is widely used in power supply circuits, motor control in automation systems, and power management solutions demanding stability, efficiency, and endurance.
Designed with HEXFET technology for reliable and efficient switching. Supports continuous drain current up to 19 A and voltage rating of 55 V. Enhancement mode P-Channel suitable for various power electronic applications.
Low gate charge (35 nC) facilitates fast switching operations. High maximum power dissipation of 68 W enhances operational robustness. Wide operating temperature range from -55°C to +175°C. TO-220 package with 3 pins for easy mounting and thermal management.
Maximum drain-source resistance of 100 mΩ contributes to power efficiency. Flexible gate-source voltage tolerance of ±20 V.
Suitable for industrial electronics, power management, automotive, and automation applications requiring efficient and durable MOSFET components. Explore more in EnvMart's Semiconductor and MOSFET categories for related components from Infineon and other top manufacturers.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 19 A.
This P-Channel MOSFET has a maximum drain-source voltage rating of 55 V.
It can dissipate up to 68 W of power, enhancing its operational robustness.
The typical gate charge for this model is 35 nC, allowing for fast switching speeds.
The maximum drain-source resistance is 100 mΩ, which helps reduce conduction losses.
It operates efficiently within a temperature range of -55°C to 175°C.
This model is housed in a TO-220 package with a 3-pin configuration for easy mounting.
It supports a gate-source voltage variation of ±20 V, providing design flexibility.
The dimensions of the TO-220 package are 10.54 mm in length, 8.77 mm in height, and 4.69 mm in width.
It is suitable for power supply circuits, motor control in automation systems, and power management solutions.
This model features an enhancement mode P-Channel channel type.
The country of origin for this MOSFET is China.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
Recently Viewed Products
$0.60
$0.58
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent