Infineon HEXFET N-Channel MOSFET 47A, 55V, Enhancement Mode, 3-Pin TO-220 IRLZ44NPBF

Infineon IRLZ44NPBF HEXFET N-Channel MOSFET is engineered for efficient electronic power switching with a maximum continuous drain current rating of 47 amperes and a maximum drain-source voltage of 55 volts. This enhancement mode transistor features advanced HEXFET technology in a 3-pin TO-220 package designed for through-hole mounting, offering excellent thermal management and voltage handling capabilities.

The device boasts a low on-resistance of 22 milliohms that minimizes conduction losses and maximizes power efficiency, making it suitable for applications requiring high current handling with minimal voltage drop. Its maximum power dissipation capacity of 110 watts ensures stable operation under demanding electrical loads.

With an operating temperature range from -55°C to +175°C, this MOSFET delivers reliable performance even in harsh industrial and automotive environments. The gate threshold voltage is low, between 1V and 2V, facilitating easy drive control, complemented by a typical gate charge of 48nC at 5V, making it optimal for high-frequency switching tasks.

Common applications include power supply load switching, DC-DC converters in renewable energy systems, motor control circuits to enhance efficiency, automotive electronics, and lighting systems that require precise power regulation. The component integrates seamlessly into complex electronic systems and power management designs.

Infineon's HEXFET IRLZ44NPBF MOSFET is a robust choice for engineers and technicians seeking performance, reliability, and efficiency in discrete semiconductor components used across industrial, automotive, manufacturing, and commercial electrical applications.

Supports a maximum continuous drain current of 47 amperes for robust power delivery. Handles drain-source voltages up to 55 volts, allowing versatility in power circuits. Features a low on-resistance of 22 milliohms to improve efficiency and reduce power loss.

Designed in a through-hole TO-220 package with 3 pins for reliable mounting and heat dissipation. Capable of dissipating a maximum power of 110 watts to sustain high loads safely. Operates within a wide temperature range from minus 55°C to 175°C for durable performance.

Enhancement mode channel ensures effective switching control with low gate threshold voltage. Comes with a typical gate charge of 48 nanocoulombs enabling high-frequency switching applications. Compatible with various semiconductor and power management systems in industrial, automotive, and control applications.

Explore more semiconductor and power management solutions on EnvMart for professional industrial and electronics applications.