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Infineon HEXFET N-Channel MOSFET 127 A, 100 V Enhancement, 3-Pin TO-263 IRFS4310ZTRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRFS4310ZTRLPBF |
| Width | 11.3mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 127A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 120nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This enhancement mode device features low drain-source resistance minimizing conduction losses.
- It supports a maximum power dissipation of 250 W for robust thermal performance.
- The device operates reliably over a temperature range from -55°C to 175°C.
- Surface mount package (TO-263) allows for versatile PCB layout and improved heat dissipation.
- Complies with automotive standard AEC-Q101 ensuring qualification for automotive applications.
- Typical gate charge at Vgs is 120 nC enabling efficient switching performance.
- Maximum gate-source voltage ratings of -20 V to +20 V support safe operation under varied conditions.
- Compact dimensions of 10.67 mm length, 11.3 mm width, and 4.83 mm height fit space-constrained designs.
Product Description
Infineon IRFS4310ZTRLPBF is a high-performance HEXFET N-Channel MOSFET designed for power management applications requiring efficient switching and thermal resilience. It supports a maximum continuous drain current of 127 A and a maximum drain-source voltage of 100 V.
The enhancement mode channel operation assures low on-resistance (6 mΩ max), reducing power dissipation and enhancing energy efficiency. It delivers reliable electrical performance over a wide temperature range from -55°C to 175°C, suitable for demanding industrial, automotive, and power conversion applications.
Designed to meet the rigorous AEC-Q101 automotive standard, this MOSFET provides enhanced protection and quality assurance for use in automotive electronics and embedded systems requiring high reliability.
The device features a typical gate charge of 120 nC at Vgs, supporting fast and efficient switching capabilities. With a maximum power dissipation rating of 250 W, it is well-suited for power converters, motor control circuits, and switching regulators. Its gate-source voltage tolerance ranges from −20 V to +20 V, offering ample headroom for robust gate drive schemes.
Physical dimensions include a length of 10.67 mm, width of 11.3 mm, and height of 4.83 mm, enabling compact design integration. This MOSFET is ideal for industrial power control, automotive electronics, and embedded power management solutions.
It supports high power density and efficiency improvement in circuit designs. Robust thermal characteristics ensure stable performance under continuous high current load. Perfect for switching power supplies, motor drivers, and DC-DC converters.
Complies with automotive-grade quality standards for rigorous applications. Explore the Infineon and semiconductor categories on EnvMart for more Power MOSFET solutions optimized for your industrial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 127 A.
It has a maximum drain-source voltage rating of 100 V.
The dimensions are 10.67 mm in length, 11.3 mm in width, and 4.83 mm in height.
This model supports a maximum power dissipation of 250 W.
The typical gate charge at Vgs is 120 nC.
It operates reliably over a temperature range from -55°C to 175°C.
The maximum gate-source voltage ratings are -20 V to +20 V.
This model uses a surface mount package type TO-263.
It complies with the AEC-Q101 automotive standard.
The maximum drain-source resistance is 6 mΩ.
This MOSFET features an N-channel type.
It is suitable for power management applications, including power converters and motor control circuits.
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