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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.31mm |
| Model | IPB200N25N3GATMA1 |
| Width | 9.45mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 64A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 64nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Infineon IPB200N25N3GATMA1 OptiMOS 3 series N-Channel MOSFET is engineered for advanced power management applications requiring high efficiency and reliable operation. With a substantial maximum continuous drain current of 64 A and a drain-source voltage rating of 250 V, this 3-pin device in a TO-263 package combines robust power handling with a compact surface-mount design.
Its enhancement mode channel and low Rds(on) resistance minimize power losses, ensuring efficient switching and heat dissipation. The MOSFET is suitable for high-frequency switching applications, including DC-DC converters, synchronous rectification, and motor control within industrial machinery and automotive systems.
The device features a maximum power dissipation of 300 W and an operating temperature range from -55°C to +175°C, catering to demanding environments. The typical gate charge of 64 nC at Vgs supports rapid switching and low gate drive losses. Compliance with RoHS and halogen-free standards highlights its environmental compatibility.
Low on-resistance for power loss reduction. High maximum continuous drain current of 64 A. Compact 3-Pin TO-263 surface mount package. Wide operating temperature range from -55°C to +175°C. Enhancement mode N-channel for efficient switching.
Typical gate charge of 64 nC for fast switching. 250 V maximum drain-source voltage rating. RoHS and halogen-free compliant design. Recommended effective thermal management for optimal performance.
This MOSFET is well-suited for power supplies, high-efficiency converters in renewable energy systems, industrial motor control, synchronous rectification in desktop power supplies, and electric vehicle energy management. Its reliable performance in heavy-load and high-frequency conditions makes it an essential component in modern electronic and electrical design.
Explore more power semiconductor solutions and components in the Infineon range available through EnvMart to enhance your industrial and commercial electronic designs.
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