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Infineon OptiMOS 3 N-Channel MOSFET 64 A 250 V Enhancement 3-Pin TO-263 IPB200N25N3GATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.57mm
Length 10.31mm
Model IPB200N25N3GATMA1
Width 9.45mm
Mount Type Surface
Series OptiMOS 3
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 64A
Maximum Drain Source Voltage Vds 250V
Maximum Drain Source Resistance Rds 20mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 300W
Typical Gate Charge Qg @ Vgs 64nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1V

Key Features

  • Features low on-resistance to minimize power loss during operation.
  • Supports continuous drain current up to 64 A ensuring high performance under load.
  • Designed with a compact 3-Pin TO-263 surface-mount package for easy integration.
  • Operates efficiently at temperatures up to 175°C for robust thermal performance.
  • Enhancement channel type MOSFET ideal for synchronous rectification and power supplies.
  • Typical gate charge of 64 nC reduces switching losses in high-frequency applications.
  • Complies with RoHS and halogen-free standards for environmentally friendly use.
  • Recommended thermal management is necessary to maintain optimal performance and longevity.

Product Description

Infineon IPB200N25N3GATMA1 OptiMOS 3 series N-Channel MOSFET is engineered for advanced power management applications requiring high efficiency and reliable operation. With a substantial maximum continuous drain current of 64 A and a drain-source voltage rating of 250 V, this 3-pin device in a TO-263 package combines robust power handling with a compact surface-mount design.

Its enhancement mode channel and low Rds(on) resistance minimize power losses, ensuring efficient switching and heat dissipation. The MOSFET is suitable for high-frequency switching applications, including DC-DC converters, synchronous rectification, and motor control within industrial machinery and automotive systems.

The device features a maximum power dissipation of 300 W and an operating temperature range from -55°C to +175°C, catering to demanding environments. The typical gate charge of 64 nC at Vgs supports rapid switching and low gate drive losses. Compliance with RoHS and halogen-free standards highlights its environmental compatibility.

Low on-resistance for power loss reduction. High maximum continuous drain current of 64 A. Compact 3-Pin TO-263 surface mount package. Wide operating temperature range from -55°C to +175°C. Enhancement mode N-channel for efficient switching.

Typical gate charge of 64 nC for fast switching. 250 V maximum drain-source voltage rating. RoHS and halogen-free compliant design. Recommended effective thermal management for optimal performance.

This MOSFET is well-suited for power supplies, high-efficiency converters in renewable energy systems, industrial motor control, synchronous rectification in desktop power supplies, and electric vehicle energy management. Its reliable performance in heavy-load and high-frequency conditions makes it an essential component in modern electronic and electrical design.

Explore more power semiconductor solutions and components in the Infineon range available through EnvMart to enhance your industrial and commercial electronic designs.

Infineon OptiMOS 3 N-Channel MOSFET 64 A 250 V Enhancement 3-Pin TO-263 IPB200N25N3GATMA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 64 A.

This unit has a maximum drain-source voltage rating of 250 V.

The typical gate charge at Vgs is 64 nC, which helps reduce switching losses in high-frequency applications.

It operates efficiently within a temperature range of -55°C to +175°C.

This MOSFET is packaged in a compact 3-Pin TO-263 surface-mount design.

The maximum power dissipation for this model is 300 W.

The maximum drain-source resistance (Rds) is 20 mΩ, which minimizes power loss during operation.

It features an enhancement mode N-channel design, which is ideal for efficient switching applications.

The dimensions of this unit are 10.31 mm in length, 9.45 mm in width, and 4.57 mm in height.

It is suitable for power supplies, high-efficiency converters, synchronous rectification, and motor control in industrial and automotive systems.

Yes, it complies with RoHS and halogen-free standards, making it environmentally friendly.

This device is designed for surface mounting.

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