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Infineon OptiMOS 3 N-Channel MOSFET 200 V 34 A Enhancement Mode 3-Pin TO-263 IPB320N20N3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.31mm |
| Model | IPB320N20N3GATMA1 |
| Width | 9.45mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 34A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 32mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 136W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features a maximum continuous drain current of 34 A for substantial load handling.
- Supports maximum drain-source voltage up to 200 V for demanding electrical conditions.
- Low on-resistance of 32 mΩ reduces conduction losses and improves efficiency.
- Encased in a compact 3-pin TO-263 surface-mount package for effective heat dissipation.
- Typical gate charge is 22 nC allowing efficient gate driving dynamics.
- Operates in enhancement mode with a forward voltage drop of 1.2 V to aid power management.
- Wide operating temperature range from -55°C to 175°C suitable for harsh environments.
- Maximum power dissipation of 136 W supports high power scenarios without derating.
Product Description
Infineon IPB320N20N3GATMA1 OptiMOS 3 N-Channel MOSFET is a high-performance power semiconductor device designed for switching and amplification tasks in advanced electronic systems. With a maximum continuous drain current of 34 A and a maximum drain-source voltage rating of 200 V, this MOSFET is suitable for robust, high-voltage switching applications demanding efficiency and thermal reliability.
The device comes in a 3-pin TO-263 surface-mount package, which offers a compact, low-profile form factor combined with a robust thermal path, essential for heat dissipation in high power dissipation environments up to 136 W. Its low drain-source resistance of 32 mΩ reduces conduction losses, enhancing overall power efficiency in circuit designs.
The forward voltage of 1.2 V helps engineers anticipate power loss and thermal requirements precisely. The typical gate charge of 22 nC ensures effective switching speed, while the ±20 V gate-source voltage rating enables handling of gate voltage excursions safely. Its wide operating temperature range from -55°C to 175°C allows reliable performance in extreme industrial and automotive conditions.
This MOSFET is ideally applied in high-voltage DC-DC converters, motor drive inverters, switched mode power supplies, industrial automation systems, and power amplifiers. It is also suitable for high-power lighting control, where efficient electrical switching and thermal management are critical.
Maximum continuous drain current: 34 A supports substantial loads. Maximum drain-source voltage: 200 V for high-voltage applications. TO-263 package type for surface mounting with robust heat dissipation. Low on-resistance of 32 mΩ decreases power losses.
Typical gate charge of 22 nC for fast switching. Forward voltage of 1.2 V assists in thermal calculation and design. Operating temperature range from -55°C to 175°C withstands harsh environments. Power dissipation up to 136 W supports demanding power applications.
±20 V gate-source voltage tolerance enhances device protection. Explore the full range of Infineon MOSFETs and discrete semiconductor products on EnvMart for your industrial and commercial electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 34 A, making it suitable for substantial load handling in various applications.
This MOSFET supports a maximum drain-source voltage of 200 V, which is ideal for high-voltage applications.
The on-resistance of this unit is 32 mΩ, which helps to reduce conduction losses and improve efficiency in circuit designs.
The typical gate charge is 22 nC, allowing for efficient gate driving dynamics during operation.
The forward voltage drop is 1.2 V, which assists in power management and thermal calculations.
It operates within a wide temperature range from -55°C to 175°C, making it suitable for harsh environments.
This model is encased in a compact 3-pin TO-263 surface-mount package, which facilitates effective heat dissipation.
The maximum power dissipation is 136 W, supporting high power scenarios without derating.
This device has a pin count of 3, which is standard for the TO-263 package.
This model features an N-channel type, which is commonly used for switching and amplification tasks.
The maximum gate-source voltage tolerance for this MOSFET is ±20 V, enhancing its protection against gate voltage excursions.
This unit belongs to the OptiMOS 3 series, known for its high-performance power semiconductor devices.
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