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onsemi N-Channel MOSFET 78 A 30 V Enhancement Mode 8-Pin SO-8FL NTMFS4C05NT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 6.1mm |
| Model | NTMFS4C05NT1G |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | NTMFS |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8FL |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 78A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 33W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- The device operates in enhancement mode with a channel type N.
- Features a low maximum drain-source resistance of 5 mΩ for efficient switching.
- Maximum power dissipation is rated at 33 W for reliable thermal performance.
- Designed for surface mounting with an 8-pin configuration.
- Supports wide operating temperatures from -55°C to 150°C.
- Maximum gate-source voltage ranges from -20 V to +20 V, suitable for diverse applications.
- Typical gate charge at Vgs is 30 nC, ensuring fast switching capabilities.
- Compact physical dimensions of 6.1 mm length, 5.1 mm width, and 1.05 mm height.
Product Description
onsemi NTMFS4C05NT1G N-Channel MOSFET in an SO-8FL package is a high-performance power transistor designed for industrial and electronic applications requiring efficient power switching and thermal management. With a maximum continuous drain current of 78 A and drain-source voltage of 30 V, it is suitable for switching regulators, DC-DC converters, and load switch applications.
The MOSFET features enhancement mode operation with an N-channel type, providing low on-resistance of 5 mΩ that minimizes conduction losses. Its maximum power dissipation rating of 33 W ensures robust performance under demanding conditions.
The device is optimized for surface mount technology with an 8-pin SO-8FL package offering compact physical dimensions (6.1 mm length, 5.1 mm width, 1.05 mm height), which facilitates high-density board layouts and efficient thermal conduction.
The maximum gate-source voltage rating of ±20 V and the low typical gate charge of 30 nC allow for rapid switching speeds and compatibility with a broad range of gate drive voltages. Operating temperature range from -55°C to 150°C supports a variety of industrial and automotive environments, although this specific product is not rated for automotive standards.
The device operates in enhancement mode with a channel type N. Features a low maximum drain-source resistance of 5 mΩ for efficient switching. Maximum power dissipation is rated at 33 W for reliable thermal performance. Designed for surface mounting with an 8-pin configuration.
Supports wide operating temperatures from -55°C to 150°C. Maximum gate-source voltage ranges from -20 V to +20 V, suitable for diverse applications. Typical gate charge at Vgs is 30 nC, ensuring fast switching capabilities.
Compact physical dimensions of 6.1 mm length, 5.1 mm width, and 1.05 mm height. This MOSFET is ideal for industrial, electronic, power management, and consumer electronic applications where efficient power control and thermal stability are essential.
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Frequently Asked Questions
The maximum continuous drain current of this model is 78 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
The dimensions of this unit are 6.1 mm in length, 5.1 mm in width, and 1.05 mm in height.
The maximum power dissipation for this model is rated at 33 W.
The maximum gate-source voltage ranges from -20 V to +20 V.
The typical gate charge at Vgs for this MOSFET is 30 nC.
This model is designed for surface mounting with an 8-pin configuration.
The operating temperature range is from -55°C to 150°C.
The maximum drain-source resistance of this device is 5 mΩ.
This model is suitable for switching regulators, DC-DC converters, and load switch applications.
This device operates in enhancement mode with an N-channel type.
The country of origin for this MOSFET is India.
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