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DiodesZetex P-Channel MOSFET 30 V 480 mA Enhancement Mode 3-Pin SOT-23 Package DMP31D0U-7

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DiodesZetex P-Channel MOSFET 30 V 480 mA Enhancement Mode 3-Pin SOT-23 Package DMP31D0U-7

Name: DiodesZetex P-Channel MOSFET 30 V 480 mA Enhancement Mode 3-Pin SOT-23 Package DMP31D0U-7
Brand: DiodesZetex
SKU: 133800
Price: 0.2 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	DMP31D0U-7
Width	1.4mm
Mount Type	Surface
Series	DMP31D0U
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	480mA
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	2Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	710mW
Typical Gate Charge Qg @ Vgs	1.5nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	-1.2V

Key Features

Low Rds(on) of 2 Ω ensures efficient switching performance.
Enhancement mode channel suitable for power management and switching.
Typical gate charge of 1.5 nC provides quick switching times.
Capable of operating between -55°C and 150°C for various environments.
Maximum power dissipation is 710 mW for reliable operation.
Maximum gate-source voltage of ±8 V supports flexible drive conditions.
Forward voltage rating at -1.2 V.

Product Description

The DiodesZetex DMP31D0U-7 is a P-Channel MOSFET transistor designed for surface mounting in electronic devices requiring efficient power switching. Encapsulated in a compact 3-pin SOT-23 package with dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height, it is optimized for space-constrained applications.

This enhancement mode MOSFET supports a maximum continuous drain current of 480 mA with a maximum drain-source voltage rating of 30 V, making it suitable for switching and power management functions in consumer electronics, industrial control circuits, and other semiconductor applications.

With a low maximum drain-source resistance (Rds) of 2 Ω, it ensures minimal power loss and heat generation. The device features a typical gate charge of 1.5 nC at Vgs, enabling rapid switching performance and efficient drive characteristics.

Designed to operate reliably across a wide temperature range from -55°C to 150°C, this MOSFET supports robust performance in diverse industrial, manufacturing, and commercial electronic environments. The maximum power dissipation is set at 710 mW, ensuring stable operation under typical load conditions.

Low Rds(on) for efficient conduction. Surface mount design in SOT-23 package. Wide operating temperature range for industrial use. Moderate power dissipation suitable for compact circuits. High gate voltage tolerance for flexible circuit design.

Compact physical size ideal for space-constrained applications. P-Channel MOSFET suitable for high-side switching.

This MOSFET is widely used in electronic components manufacturing, power management circuits, and other semiconductor device assemblies. It is compliant with standard electronic component manufacturing requirements but does not hold specific automotive or special industrial standards.

Explore additional MOSFET and semiconductor components in the Electronics & Electricals category on EnvMart for your industrial, commercial, and manufacturing solutions.