Infineon OptiMOS-T2 N-Channel MOSFET 120 A 60 V Enhancement Mode 3-Pin TO-263 IPB120N06S402ATMA2

Infineon IPB120N06S402ATMA2 is a high-performance N-Channel MOSFET from the OptiMOS-T2 series, engineered for power electronic designs requiring efficient switching and thermal management. It is housed in a 3-pin TO-263 surface mount package measuring 10 mm in length, 9.25 mm in width, and 4.4 mm in height, providing a compact footprint suitable for dense PCB layouts.

This MOSFET offers a maximum continuous drain current of 120 A and a maximum drain-source voltage rating of 60 V, making it ideal for applications such as power conversion, load switching, and electric drives. Its low on-resistance of 2.8 mOhms reduces power losses and improves overall system efficiency.

The device operates in enhancement mode with a typical gate charge of 150 nC at Vgs, facilitating fast switching and control. It supports a gate-source voltage range of -20 V to +20 V and features a forward voltage drop of only 0.9 V, optimizing conduction performance.

Designed for robust performance, this MOSFET can dissipate up to 188 W of power and sustain maximum operating temperatures of 175°C, ensuring reliability in harsh environments. The device is AEC-Q101 automotive qualified, meeting stringent reliability standards for automotive and industrial applications.

Common industrial uses include power management in computing equipment, automotive powertrain systems, motor drives, and numerous other energy-efficient electronic circuits. Its green product status denotes compliance with RoHS environmental standards, supporting sustainable development goals.

This MOSFET supports a maximum continuous drain current of 120 amps. The maximum drain-source voltage rating is 60 volts. Equipped with a 3-pin TO-263 surface mount package for efficient heat dissipation. Features enhancement mode channel operation for switching control.

Maximum power dissipation is 188 watts, suitable for demanding power management tasks. Operating temperature range from -55°C up to 175°C ensures reliability under harsh conditions. Low on-resistance of 2.8 milliohms minimizes conduction losses.

Meets automotive standard AEC-Q101 for enhanced quality and durability. Typical gate charge of 150 nanocoulombs optimizes switching speed characteristics. Explore EnvMart for a wide range of Infineon semiconductor devices and Power MOSFETs to support your industrial, automotive, and electronic manufacturing needs.