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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.7mm |
| Length | 6.7mm |
| Model | ZVP4525GTA |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 260mA |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 18Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 2.45nC |
| Maximum Gate Source Voltage Vgs | -40, +40V |
| Forward Voltage Vf | 0.97V |
DiodesZetex ZVP4525GTA is a high-quality P-Channel MOSFET designed for semiconductor switching applications requiring a maximum continuous drain current of 260mA and a maximum drain-source voltage of 250V. It utilizes enhancement mode channel technology housed in a compact 4-pin SOT-223 surface mount package, making it ideal for automated machinery insertion and circuit integration.
The device features a maximum power dissipation rating of 2W and a typical gate charge of 2.45 nC, providing efficient fast switching capabilities crucial in electronic circuits. Its maximum drain-source resistance of 18Ω ensures minimal conduction losses, improving overall circuit efficiency.
Engineered to operate within a temperature range of -55°C to 150°C, the ZVP4525GTA is well-suited for demanding industrial and automotive electronic environments. It also meets the AEC-Q101 automotive standard, confirming its suitability for automotive system designs.
With physical dimensions of 6.7mm in length, 3.7mm in width, and 1.7mm in height, it offers a small footprint suitable for high-density printed circuit boards. The maximum gate source voltage rating of -40V to +40V and typical forward voltage of 0.97V provide stable operation under varied electrical conditions.
Maximum continuous drain current of 260 mA ensures low power operation. Durable SOT-223 surface mount package with 4 pins for easy PCB mounting. Maximum drain-source voltage rating of 250 V for robust voltage handling. Enhancement channel mode for reliable switching applications.
Low maximum drain-source resistance of 18Ω minimizes conduction losses. Typical gate charge of 2.45 nC enables fast switching performance. Operating temperature range from -55°C to 150°C supports harsh environments. Compliant with automotive standard AEC-Q101 ensuring high quality and reliability.
Compact dimensions with 6.7mm length, 3.7mm width, and 1.7mm height optimize board space usage.
This MOSFET is recommended for use in industrial automation, automotive electronics, power management circuits, and various electronic semiconductor applications requiring a reliable, small-footprint P-Channel transistor.
Explore more semiconductor products and MOSFET components on EnvMart for advanced electronic and electrical solutions.
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