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DiodesZetex P-Channel MOSFET, 11 A, 20 V Enhancement Mode, 8-Pin PowerDI3333 Package DMP2008UFG-7
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 0.85mm |
| Length | 3.35mm |
| Model | DMP2008UFG-7 |
| Width | 3.35mm |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerDI3333 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 17mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 41W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -0.7V |
Key Features
- Supports a maximum continuous drain current of 11 amperes.
- Maximum drain-source voltage rated at 20 volts.
- Maximum power dissipation of 41 watts for high performance.
- Low drain-source resistance of 17 milliohms enhances efficiency.
- Typical gate charge of 72 nanocoulombs for precise control.
- Operates within a temperature range from -55°C to 150°C.
- Compact 8-pin PowerDI3333 package suitable for surface mounting.
- Complies with automotive standard AEC-Q101 for reliability.
Product Description
The DiodesZetex DMP2008UFG-7 is a high-performance P-Channel MOSFET designed for demanding power management and semiconductor applications. With a maximum continuous drain current rating of 11 A and a drain-source voltage of up to 20 V, this enhancement mode transistor offers reliable switching and conduction capabilities.
Its 8-pin PowerDI3333 package facilitates easy surface mounting, making it ideal for compact electronic circuits and modern PCB designs. The device features a low drain-source resistance of 17 milliohms, minimizing power loss and improving efficiency in power switching scenarios.
The MOSFET is characterized by a typical gate charge of 72 nC at specified gate voltage, allowing for precise control in switching performance. It supports a wide operating temperature range from -55°C to 150°C, suitable for automotive and industrial environments. Compliance with AEC-Q101 automotive standards underscores its suitability for automotive electronic control unit (ECU) systems.
Package dimensions measure approximately 3.35 mm in length and width, with a height of 0.85 mm, allowing integration in space-constrained applications. The device's gate-source voltage rating of -8 V to +8 V and forward voltage of -0.7 V ensure reliable electrical characteristics under various conditions.
Maximum drain current of 11 A for robust power handling. Drain-source voltage rating of 20 V ensures suitable voltage range for multiple applications. Enhanced power dissipation capacity of 41 W improves thermal management.
Low Rds(on) of 17 milliohms reduces conduction losses. Typical gate charge of 72 nC enables efficient switching control. Wide operating temperature range (-55°C to 150°C) for industrial and automotive use. Compact 8-pin PowerDI3333 surface mount package.
Certified to AEC-Q101 automotive standard, ensuring reliability in automotive systems.
This MOSFET is optimized for applications in power management, semiconductor circuits, automotive electronics, and industrial controls. Its design ensures enhanced performance and durability in environments requiring reliable switching devices.
Explore more semiconductor components, MOSFETs, and power management solutions in our Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 amperes.
This MOSFET has a maximum drain-source voltage rating of 20 volts.
It has a maximum power dissipation capacity of 41 watts.
The drain-source resistance is rated at 17 milliohms, which enhances efficiency.
It operates within a temperature range from -55°C to 150°C.
The DMP2008UFG-7 comes in an 8-pin PowerDI3333 package suitable for surface mounting.
The typical gate charge is 72 nanocoulombs at the specified gate voltage.
It complies with the AEC-Q101 automotive standard, ensuring reliability in automotive applications.
The forward voltage rating is -0.7 volts.
The dimensions are approximately 3.35 mm in length and width, with a height of 0.85 mm.
The maximum gate-source voltage rating is -8 V to +8 V.
This MOSFET is optimized for power management, semiconductor circuits, automotive electronics, and industrial controls.
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