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Vishay N-Channel MOSFET 300 mA 240 V Enhancement 3-Pin SOT-23 TN2404K-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | TN2404K-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | TN2404K/TN2404KL/BS107KL |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 300mA |
| Maximum Drain Source Voltage Vds | 240V |
| Maximum Drain Source Resistance Rds | 6Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 510mW |
| Typical Gate Charge Qg @ Vgs | 4.87nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports a maximum continuous drain current of 300 mA for moderate current loads.
- Maximum drain-source voltage rating is 240 V ensuring reliability under high voltage conditions.
- Package type is compact SOT-23 with 3 pins, suitable for surface mounting.
- Enhancement mode channel type allows controlled switching operation.
- Power dissipation rating of 510 mW for efficient thermal management.
- Minimum operating temperature is −55 °C and maximum operating temperature is 150 °C for wide thermal range use.
- Maximum drain-source resistance of 6 Ω supports low conduction losses.
- Typical gate charge of 4.87 nC at Vgs ensures fast switching performance.
Product Description
Vishay TN2404K-T1-GE3 is a high-performance N-Channel MOSFET designed for efficient electronic switching and control in various industrial and consumer electronics applications. Featuring a compact 3-Pin SOT-23 surface mount package, it supports a maximum continuous drain current of 300 mA and withstands up to 240 V drain-source voltage. This enhancement mode MOSFET ensures controlled switching with minimal power loss and operates reliably over a wide temperature range from −55 °C to 150 °C.
The device offers a maximum power dissipation of 510 mW, making it ideal for moderate power applications while maintaining low thermal stress. Its low drain-source resistance (6 Ω) reduces conduction losses, contributing to higher efficiency in circuits. The typical gate charge of 4.87 nC at gate-source voltage guarantees fast switching, crucial for high-frequency power management systems.
Additional features include a maximum gate-source voltage rating of −20 V to +20 V to protect sensitive gate structures and a forward voltage drop of 1.2 V ensuring efficient power transfer. The compact dimensions (3.04 mm long, 1.4 mm wide, and 1.02 mm high) facilitate use in space-constrained PCB layouts.
This MOSFET is well-suited for applications in industrial electronics, power supplies, signal processing, and other semiconductor-dependent equipment. Its surface-mount design and reliable electrical characteristics support use in manufacturing and prototyping environments requiring consistent performance.
Supports a continuous drain current of 300 mA. Handles up to 240 V drain-source voltage. Small 3-Pin SOT-23 surface mount package. Enhancement mode channel for reliable switching. Power dissipation capacity of 510 mW for thermal efficiency.
Operates in a temperature range of −55 °C to 150 °C. Low drain-source resistance of 6 Ω for energy efficiency. Typical gate charge of 4.87 nC for fast switching. Gate-source voltage rated at −20 V to +20 V for gate protection.
Forward voltage drop of 1.2 V for low power loss. Compact dimensions ideal for tight PCB spaces.
Choose Vishay N-channel MOSFETs for trusted semiconductor quality and advanced power management solutions. Explore our extensive catalog for durable, high-performance components suitable for laboratory, industrial, and manufacturing applications at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 300 mA.
This MOSFET has a maximum drain-source voltage rating of 240 V.
The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The typical gate charge is 4.87 nC at the specified gate-source voltage.
It has a power dissipation capacity of 510 mW.
The operating temperature range is from −55 °C to 150 °C.
The maximum drain-source resistance is 6 Ω, which helps reduce conduction losses.
This model uses an enhancement mode N-channel configuration for controlled switching.
The forward voltage drop is 1.2 V, ensuring efficient power transfer.
The maximum gate-source voltage rating is −20 V to +20 V, providing protection for sensitive gate structures.
This MOSFET features a 3-pin configuration suitable for surface mounting.
It is well-suited for applications in industrial electronics, power supplies, and signal processing.
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