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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF540PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 28A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 77mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2.5V |
| IRF540PBF N-Channel MOSFET, 28 A, 100 V, 3-Pin TO-220AB VishayBrand | Vishay |
Vishay IRF540PBF is a high-performance N-Channel MOSFET transistor designed for switching and amplification applications in electronic circuits. It supports a continuous drain current of 28 amperes and withstands a maximum drain-source voltage of 100 volts, making it suitable for power control tasks.
Constructed with an enhancement mode channel and housed in a compact 3-pin TO-220 package, it ensures efficient heat dissipation and easy integration onto circuit boards with through-hole mounting.
This MOSFET features a low drain-source resistance of 77 milliohms, which leads to reduced power losses during conduction. The device can safely operate between a temperature range of -55°C minimum and 175°C maximum, ensuring durability in demanding environments.
Its typical gate charge is 72 nanocoulombs at the gate-source voltage, accompanied by a maximum gate-source voltage of -20 V to +20 V, providing robust control over switching speed and power efficiency.
Applications for the IRF540PBF include industrial power supplies, motor control circuits, switching regulators, and other power electronic systems demanding reliable and efficient MOSFET solutions.
Delivers a maximum continuous drain current of 28 amperes. Has a maximum drain-source voltage rating of 100 volts. Features low on-resistance for efficient switching performance. Equipped with an enhancement mode channel for reliability and performance.
Compact TO-220 package supports through-hole mounting. Can dissipate power up to 150 watts during operation. Operates effectively within a temperature range of -55°C to 175°C. Typical gate charge of 72 nanocoulombs at gate-source voltage.
Maximum gate-source voltage tolerance of -20 V to +20 V. Suitability for industrial and electronic power applications.
This product facilitates robust electronic design for industrial, manufacturing, and electronic component assembly sectors. Explore more Vishay MOSFETs and semiconductor devices through EnvMart for your next project or production requirement.
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