Vishay N-Channel MOSFET 430 A 20 V Enhancement Mode Surface Mount 8-Pin SO-8 Package SIR178DP-T1-RE3

The Vishay SIR178DP-T1-RE3 is a high-performance N-Channel MOSFET engineered for applications requiring very high continuous drain current up to 430 A and low drain-source voltage of 20 V. This device is packaged in a power-efficient SO-8 surface mount format with 8 pins, making it suitable for dense PCB assemblies used in industrial, power management, automotive, and electronic systems.

Featuring TrenchFET Gen IV technology, the MOSFET combines a very low RDS(on) and an optimized gate charge for superior figure-of-merit, which results in minimized power losses during conduction and switching. The enhancement mode channel ensures reliable and efficient switching performance under varying load conditions.

This MOSFET is fully tested for ruggedness including 100% Rg and Unclamped Inductive Switching (UIS) tests, guaranteeing high reliability in demanding applications. Its maximum power dissipation of 104 W and operating temperature range from -55°C to 150°C make it apt for harsh industrial and automotive environments.

The device’s compact footprint with length 6.25 mm, width 5.26 mm, and height 1.12 mm enables designers to optimize space without compromising performance. Low RDS(on) of 0.31 milliohms at typical gate drive voltage ensures minimal conduction losses which is critical in power supply and motor drive applications.

Typical gate charge of 204 nC at a gate-source voltage of 20 V allows for faster switching and improved efficiency. Maximum gate-source voltage rating of ±12 V offers protection against standard voltage transients in power circuits.

High-current N-Channel MOSFET with 430 A continuous drain current. Low-voltage operation at 20 V drain-source maximum rating. Compact surface mount SO-8 8-pin package for PCB integration. Enhanced conduction with 0.31 mΩ drain-source resistance.

Robust power dissipation rating of 104 W. Wide operating temperature from -55°C to 150°C for rugged use cases. TrenchFET Gen IV technology for optimal efficiency and reliability. 100% Rg and UIS tested for industrial-grade durability.

This Vishay MOSFET is ideal for use in power management, automotive electronics, industrial motor control, and high-frequency switching circuits. Its advanced features and compact design support reliable and efficient operation in modern electronic equipment.

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