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Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.78mm |
| Length | 3.3mm |
| Model | SISS27DN-T1-GE3 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 23A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 57W |
| Typical Gate Charge Qg @ Vgs | 92nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- PowerPAK 1212 package provides efficient surface mount capability.
- TrenchFET Gen III technology ensures low resistance and efficient switching.
- Maximum drain-source resistance (Rds) of 9 milliohms for low conduction losses.
- Enhancement mode with P-channel type for complementary applications.
- High power dissipation capacity of 57 W suitable for demanding circuits.
- Wide operating temperature range from -55°C to 150°C.
- Maximum gate-source voltage of ±20 V allows robust driving conditions.
- Low typical gate charge of 92 nC enabling efficient gate switching.
Product Description
Vishay SISS27DN-T1-GE3 is a TrenchFET Type P-Channel MOSFET designed for efficient power switching and amplification. It supports a maximum continuous drain current of 23 A and a maximum drain-source voltage of 30 V, making it ideal for mid-power applications. The device is housed in an 8-pin PowerPAK 1212 surface mount package, providing a compact footprint of 3.3 mm by 3.3 mm and a height of 0.78 mm for space-constrained designs.
This MOSFET utilizes Vishay's TrenchFET Gen III technology, delivering low conduction losses with a maximum drain-source resistance of 9 milliohms. The enhancement-mode P-channel device supports a typical gate charge of 92 nC and can tolerate gate-source voltages up to ±20 V, allowing robust and efficient gate drive performance.
The device can dissipate up to 57 W of power and operate reliably across a wide temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and power management applications where durability and performance are critical.
Applications include DC/DC converters, load switches, power management systems, and general-purpose switching in electronic circuits. Its surface mount packaging and reliable electrical characteristics contribute to improved circuit efficiency and compact design architecture.
PowerPAK 1212 package enables compact surface mounting. Low Rds(on) of 9 milliohms for efficient power handling. Wide temperature range from -55°C to 150°C for reliability. Robust ±20 V gate-source voltage withstand capability.
High power dissipation supports demanding power applications. Typical gate charge of 92 nC facilitates fast switching.
Choose Vishay TrenchFET SISS27DN-T1-GE3 MOSFET for high-efficiency power switching needs in industrial and automotive electronics. Explore more semiconductor components and MOSFETs in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 23 A.
It has a maximum drain-source voltage of 30 V.
The device can dissipate up to 57 W of power.
The typical gate charge is 92 nC.
The maximum gate-source voltage is ±20 V.
It has a maximum drain-source resistance of 9 milliohms.
The dimensions are 3.3 mm x 3.3 mm with a height of 0.78 mm.
The operating temperature range is from -55°C to 150°C.
This MOSFET uses surface mount technology.
It is suitable for applications such as DC/DC converters, load switches, and power management systems.
The channel mode is enhancement mode, suitable for complementary applications.
This model has 8 pins.
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