Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion Mode, 4-Pin PowerPAK SO-8L SQJA26EP-T1_GE3

Vishay SQJA26EP-T1_GE3 is a high-performance N-Channel MOSFET designed for automotive and industrial power applications. It operates with a maximum continuous drain current of 410 A and a maximum drain-source voltage of 30 V in depletion mode configuration, making it suitable for high power density circuits.

Housed in a compact 4-pin PowerPAK SO-8L surface mount package, the device offers a very low drain-source resistance of 0.00128 Ω which enhances efficiency by reducing conduction losses. The MOSFET can dissipate up to 255 W of power, supporting demanding thermal environments.

This component complies with the automotive standard AEC-Q101 ensuring reliability under rigorous automotive operating conditions. It is rated to operate from -55°C up to 125°C, with a maximum gate-source voltage of 20 V and forward voltage of 1.1 V, making it robust for various industrial applications.

Typical gate charge of 43 nC at gate-source voltage provides efficient switching performance. Its compact physical dimensions facilitate easy integration into PCB assemblies where space conservation is critical.

The Vishay SQJA26EP-T1_GE3 is ideal for automotive motor controls, power management circuits, industrial drives, and other electronic applications requiring high current and voltage capabilities in a small footprint. By integrating this MOSFET, engineers can improve system efficiency and reliability in harsh environments.

This MOSFET supports a maximum continuous drain current of 410 A for high power applications. It operates at a maximum drain-source voltage (Vds) of 30 V with depletion channel mode. The package type is 4-pin PowerPAK SO-8L ensuring surface mount compatibility.

Features low maximum drain-source resistance of 0.00128 Ohms for efficient conduction. Maximum power dissipation is rated at 255 W for reliable thermal performance. Designed for automotive applications meeting the AEC-Q101 standard.

Typical gate charge at Vgs is 43 nC, supporting fast switching. Minimum operating temperature is -55°C and maximum operating temperature is 125°C. Maximum gate-source voltage allowed is 20 V with a forward voltage of 1.1 V.

Compact device dimensions: length 6.15 mm and width 4.9 mm. Explore more semiconductor and MOSFET products at EnvMart to find compatible components for your electronics projects.