Vishay P-Channel MOSFET, 760 mA, 30 V Enhancement Mode, 6-Pin SC-89 Package SI1077X-T1-GE3

Vishay SI1077X-T1-GE3 is a P-Channel MOSFET designed for discrete semiconductor and power applications requiring a maximum continuous drain current of 760 mA and a maximum drain-source voltage of 30 V. Packaged in a space-efficient 6-pin SC-89 surface mount format, this MOSFET offers enhancement mode channel operation for high performance switching.

The device features a maximum drain-source resistance of just 244 milliohms, reducing power loss and improving efficiency in low voltage circuits. It supports operation across a wide temperature range, from -55°C to 150°C, making it suitable for demanding industrial and electronic environments.

With a typical gate charge of 4.43 nC at the specified gate voltage, the MOSFET ensures fast switching and low gate drive power. Its gate-source voltage tolerance ranges between -12 V to +12 V, providing robust gate protection. This combination of attributes makes it suitable for applications in power management, signal switching, and other electronic component integrations.

The SC-89 compact package (1.7 mm length × 1.2 mm width × 0.6 mm height) facilitates easy surface mounting, enabling space-saving arrangements on printed circuit boards. Power dissipation is rated up to 236 mW, supporting moderate power handling in compact system designs.

Supports enhancement mode operation for efficient switching performance. Maximum continuous drain current rated at 760 mA for reliable power handling. Low maximum drain-source resistance of 244 milliohms to minimize conduction losses.

Compact surface mount design with dimensions of 1.7 mm length, 1.2 mm width, and 0.6 mm height. Wide operating temperature range from -55°C to 150°C for extended application versatility. Maximum power dissipation capability of 236 mW for moderate power requirements.

Typical gate charge of 4.43 nC at gate-source voltage operating point. Rated maximum gate-source voltage range from -12 V to +12 V ensuring gate protection.

This MOSFET is commonly applied in industrial, electronic, and power management systems requiring efficient, compact P-channel switches. It is suitable for manufacturing processes involving small signal amplification, load switching, and power regulation within electronic devices and embedded systems.

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