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Vishay P-Channel MOSFET 3-Pin TO-252 2.7 A 250 V Enhancement IRFR9214TRPBF

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Vishay P-Channel MOSFET 3-Pin TO-252 2.7 A 250 V Enhancement IRFR9214TRPBF

Name: Vishay P-Channel MOSFET 3-Pin TO-252 2.7 A 250 V Enhancement IRFR9214TRPBF
Brand: Vishay
SKU: 132884
Price: 0.72 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	2.38mm
Length	6.73mm
Model	IRFR9214TRPBF
Width	6.22mm
Mount Type	Surface
Series	IRFR
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	2.7A
Maximum Drain Source Voltage Vds	250V
Maximum Drain Source Resistance Rds	3Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	50W
Typical Gate Charge Qg @ Vgs	14nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-5.8V

Key Features

This 3-pin MOSFET features an enhancement channel mode for efficient switching.
The package type TO-252 ensures surface mounting compatibility.
Maximum power dissipation rated at 50 W supports high thermal performance.
Operating temperature ranges from -55°C to 150°C for versatile industrial use.
The device delivers a maximum gate-source voltage of -20 to +20 V with a typical gate charge of 14 nC.
Its compact dimensions (6.73 mm length, 6.22 mm width, 2.38 mm height) enable dense PCB integration.
The maximum drain-source resistance is 3 ohms, optimizing conduction losses.
Forward voltage is -5.8 V facilitating effective operation in circuits.

Product Description

Vishay IRFR9214TRPBF is a P-Channel MOSFET transistor designed for discrete semiconductor applications where switch efficiency and control is critical. Featuring a 3-pin TO-252 surface-mount package, it delivers a maximum continuous drain current of 2.7 A and can handle drain-source voltages up to 250 V. This enhancement-mode MOSFET is suitable for power management in industrial, automotive, and electronic control systems.

The device's power dissipation capacity of 50 W allows it to operate under significant load while maintaining reliability. Its operating temperature range from -55°C to 150°C makes it robust for harsh environments. The typical gate charge of 14 nC and maximum gate-source voltage of ±20 V provide responsive gate control characteristics.

Compact physical dimensions (length 6.73 mm, width 6.22 mm, height 2.38 mm) make it ideal for applications requiring high density and surface mounting technology. The maximum drain-source resistance of 3 ohms supports low conduction losses, improving overall circuit efficiency. The forward voltage of -5.8 V contributes to optimized current flow in switching circuits.

This MOSFET series (IRFR) from Vishay Semiconductor is engineered for high durability and performance in electronic assemblies, including power supplies, motor controls, and voltage regulators. It can be used in manufacturing, telecommunications, automotive electronics, and other industrial environments requiring reliable semiconductors.

This 3-pin P-Channel MOSFET in TO-252 package supports surface mounting. Maximum drain current of 2.7 A and drain-source voltage of 250 V. Power dissipation rating of 50 W facilitates robust handling of electrical loads.

Wide operating temperature range from -55°C to 150°C ensures versatile deployment. Gate charge 14 nC and gate-source voltage up to ±20 V enable effective switching. Compact form factor with 6.73 mm length and 6.22 mm width.

Maximum on-resistance 3 ohms reduces conduction losses for efficiency. Explore Vishay products and semiconductors on EnvMart for your industrial and electronic component needs.