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onsemi Small Signal NPN Transistor, 700 mA Maximum DC Collector Current, 160 V Maximum Collector Emitter 2SC3648S-TD-E

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 0.9mm
Length 4.5mm
Model 2SC3648S-TD-E
Width 4mm
Mount Type Surface
Series 2SC3648
Maximum Operating Temperature 150°C
Package Type PCP
Pin Count 3
Maximum Collector Emitter Voltage Vceo 160V
Minimum DC Current Gain hFE 90
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 180V
Maximum Power Dissipation Pd 1.3W
Maximum DC Collector Current Idc 700mA
Transistor Configuration Single
Maximum Transition Frequency ft 120MHz

Key Features

  • Maximum DC collector current of 700 mA ensures robust conduction capabilities.
  • Maximum collector-emitter voltage rating of 160 V allows operation in high voltage circuits.
  • Surface mount package type PCP with 3 pins supports efficient PCB integration.
  • NPN transistor configuration optimized for single transistor use in amplification applications.
  • Maximum power dissipation of 1.3 W for reliable thermal performance.
  • Minimum DC current gain (hFE) of 90 assures sufficient amplification.
  • Maximum transition frequency of 120 MHz suitable for high-speed switching applications.
  • Compact dimensions with length 4.5 mm, width 4 mm, and height 0.9 mm reduce space on circuit boards.

Product Description

onsemi 2SC3648S-TD-E Small Signal NPN Transistor is engineered for discrete semiconductor applications requiring reliable switching and amplification. It features a maximum DC collector current of 700 mA and a collector-emitter voltage rating of 160 V, enabling performance in a range of circuits requiring medium power levels.

The transistor comes in a compact 3-pin PCP surface mount package that facilitates easy assembly on printed circuit boards used in industrial, automotive, and electronics manufacturing environments.

This single NPN transistor supports a minimum DC current gain (hFE) of 90 and can operate at high transition frequencies up to 120 MHz, making it suitable for RF and switching applications where speed and gain are critical.

With a maximum power dissipation of 1.3 W and the ability to operate in temperatures as high as 150°C, the device is designed to maintain stable operation in challenging thermal conditions. Its dimensions (4.5 mm length, 4 mm width, 0.9 mm height) allow for compact circuit layouts.

This transistor is manufactured in China and conforms to industry semiconductor standards, providing a cost-effective and reliable component for electronic device manufacturers and repair specialists.

Maximum DC collector current of 700 mA ensures robust conduction capabilities. Maximum collector-emitter voltage rating of 160 V allows operation in high voltage circuits. Surface mount package type PCP with 3 pins supports efficient PCB integration.

NPN transistor configuration optimized for single transistor use in amplification applications. Maximum power dissipation of 1.3 W for reliable thermal performance. Minimum DC current gain (hFE) of 90 assures sufficient amplification.

Maximum transition frequency of 120 MHz suitable for high-speed switching applications. Compact dimensions with length 4.5 mm, width 4 mm, and height 0.9 mm reduce space on circuit boards. Maximum operating temperature up to 150°C supports use in demanding environments.

Manufactured in China following standard semiconductor industry processes.

This bipolar transistor is suitable for industrial electronics, communication equipment, power supplies, and automotive control systems. Discover reliable transistor components and related semiconductor products in the Electronics & Electricals category on EnvMart.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal NPN Transistor, 700 mA Maximum DC Collector Current, 160 V Maximum Collector Emitter 2SC3648S-TD-E
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Frequently Asked Questions

The maximum DC collector current for this model is 700 mA, ensuring robust conduction capabilities in various applications.

This transistor has a maximum collector-emitter voltage rating of 160 V, allowing it to operate in high voltage circuits.

The maximum power dissipation for this unit is 1.3 W, which supports reliable thermal performance during operation.

The dimensions of this model are 4.5 mm in length, 4 mm in width, and 0.9 mm in height, making it compact for circuit layouts.

The minimum DC current gain (hFE) for this transistor is 90, which assures sufficient amplification in applications.

This model supports a maximum transition frequency of 120 MHz, making it suitable for high-speed switching applications.

It comes in a surface mount package type PCP with 3 pins, facilitating efficient PCB integration.

The maximum operating temperature for this unit is 150°C, allowing it to function in demanding environments.

This is a single NPN transistor, optimized for use in amplification applications.

The maximum emitter-base voltage (VEBO) rating for this model is 6 V.

This bipolar transistor is suitable for industrial electronics, communication equipment, power supplies, and automotive control systems.

The maximum collector-base voltage (VCBO) rating for this transistor is 180 V.

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