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Vishay N-Channel Enhancement MOSFET 60A 100V SO-8 Package Surface Mount SiR870ADP Series SIR870ADP-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SIR870ADP-T1-GE3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Series | SiR870ADP |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 10.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 53.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- The device operates efficiently with a maximum power dissipation of 104 watts.
- It features a low drain-source resistance of 10.5 milliohms to reduce conduction losses.
- Designed for operation across a temperature range from -55°C to 150°C for robust industrial use.
- Typical gate charge of 53.5 nanocoulombs enables fast switching performance.
- Supports a maximum gate-source voltage of -20 to +20 volts for stable operation.
- Forward voltage rating of 1.1 volts ensures efficient forward conduction.
Product Description
Vishay SIR870ADP-T1-GE3 N-Channel Enhancement Mode MOSFET offers a continuous drain current of 60 amperes and a maximum drain-source voltage of 100 volts, packaged in an 8-pin SO-8 surface mount package.
This MOSFET excels in power switching applications due to its low on-resistance of 10.5 milliohms, allowing for reduced power losses and higher efficiency in electronic circuits.
The device features a maximum power dissipation of 104 watts and is rated for operation in harsh temperature environments from -55°C minimum to 150°C maximum, making it suitable for industrial, automotive, and power management applications.
Its typical gate charge of 53.5 nanocoulombs enables fast switching speeds, which is essential for PWM and motor control uses. The wide gate-source voltage tolerance of -20 to +20 volts ensures reliable drive characteristics under varying operating conditions.
The compact size with dimensions of 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height allows for efficient PCB layout in densely packed assemblies.
This MOSFET is ideal for use in power control circuits, DC-DC converters, motor drives, and other applications requiring high current and voltage capabilities in a small surface mount format.
The device operates efficiently with a maximum power dissipation of 104 watts. It features a low drain-source resistance of 10.5 milliohms to reduce conduction losses. Designed for operation across a temperature range from -55°C to 150°C for robust industrial use.
Typical gate charge of 53.5 nanocoulombs enables fast switching performance. Supports a maximum gate-source voltage of -20 to +20 volts for stable operation. Compact dimensions: length 6.25 mm, width 5.26 mm, height 1.12 mm, ideal for space-constrained PCBs.
Forward voltage rating of 1.1 volts ensures efficient forward conduction. Explore other Vishay power semiconductors in the EnvMart catalog for complementary components to enhance your electronic designs and manufacturing processes.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 60 amperes.
This model has a maximum drain-source voltage rating of 100 volts.
It can dissipate a maximum power of 104 watts.
The device features a low drain-source resistance of 10.5 milliohms.
It is designed for operation in a temperature range from -55°C to 150°C.
The typical gate charge is 53.5 nanocoulombs.
It supports a maximum gate-source voltage of -20 to +20 volts.
The dimensions are 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height.
It is packaged in an 8-pin SO-8 surface mount configuration.
This model is ideal for power control circuits, DC-DC converters, and motor drives.
The forward voltage rating is 1.1 volts.
This MOSFET has a pin count of 8.
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