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Vishay N-Channel MOSFET 1.7 A 400 V Enhancement Mode 3-Pin TO-252 IRFR310TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | IRFR310TRPBF |
| Width | 6.22mm |
| Mount Type | Through Hole, Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.7A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 3.6Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.6V |
Key Features
- Maximum continuous drain current of 1.7 amperes for reliable operation.
- Supports maximum drain-source voltage of 400 volts for high voltage applications.
- TO-252 package type with through-hole and surface mount capability.
- Low maximum drain-source resistance of 3.6 ohms to reduce power loss.
- Operational temperature range from -55°C to 150°C for robust performance.
- Typical gate charge of 12 nanocoulombs ensuring efficient switching.
- Maximum power dissipation capability of 25 watts.
- Forward voltage drop of 1.6 volts ensuring efficient conduction.
Product Description
Vishay IRFR310TRPBF is an N-Channel MOSFET designed for applications requiring a maximum continuous drain current of 1.7 A and a maximum drain-source voltage of 400 V. It features an enhancement channel mode with a 3-pin TO-252 package suitable for both through-hole and surface mounting.
This device offers a maximum power dissipation of 25 W and a low maximum drain-source resistance of 3.6 Ω, which helps improve efficiency and reduce heat generation in power management circuits. Its typical gate charge of 12 nC allows for fast switching, suitable for high frequency switching power supplies and motor control applications.
Operating across a broad temperature range of -55°C to 150°C, the IRFR310TRPBF provides reliable performance in diverse industrial and electronic environments including power supplies, converters, and electronic control systems.
The MOSFET complies with IEC 61249-2-21 and RoHS 2002/95/EC standards, ensuring environmental and safety conformity.
Its compact dimensions of 6.73 mm length, 6.22 mm width, and 2.38 mm height allow for efficient PCB layout in dense designs. The device is not automotive certified and is typically used in electronic component assembly for industrial, laboratory, and manufacturing uses.
Maximum continuous drain current of 1.7 amperes. Maximum drain-source voltage rating of 400 volts. Enhancement mode operation suitable for various applications. Low drain-source resistance of 3.6 ohms for efficiency. Wide operation temperature range from -55°C to 150°C.
Typical gate charge of 12 nanocoulombs. Maximum power dissipation of 25 watts. Compliant with IEC 61249-2-21 and RoHS 2002/95/EC standards. Compact TO-252 package for flexible mounting options.
This Vishay N-Channel MOSFET IRFR310TRPBF is optimal for use in power management, industrial electronics, and electronic control manufacturing. It can be effectively integrated in circuits requiring powerful switching transistors with robust voltage and current handling capabilities.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.7 amperes.
It supports a maximum drain-source voltage of 400 volts, making it suitable for high voltage applications.
This MOSFET comes in a TO-252 package type, which allows for both through-hole and surface mounting.
The maximum power dissipation capability of this model is 25 watts.
The typical gate charge is 12 nanocoulombs, which facilitates efficient switching.
It operates within a temperature range of -55°C to 150°C, suitable for various environments.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
The maximum drain-source resistance is 3.6 ohms, which helps reduce power loss.
It is an N-Channel MOSFET designed for enhancement mode operation.
It complies with IEC 61249-2-21 and RoHS 2002/95/EC standards, ensuring environmental and safety conformity.
The forward voltage drop is 1.6 volts, ensuring efficient conduction.
This MOSFET is optimal for use in power management, industrial electronics, and electronic control systems.
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