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onsemi Transistor PNP 3-Pin SOT-23 600 mA Maximum Collector Current 40 V DC Voltage MMBT4403LT3G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.11mm |
| Length | 3.04mm |
| Model | MMBT4403LT3G |
| Width | 2.64mm |
| Mount Type | Surface |
| Series | MMBT4403L |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -40V dc |
| Minimum DC Current Gain hFE | 20 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | 40V dc |
| Maximum Power Dissipation Pd | 225mW |
| Maximum DC Collector Current Idc | -600mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
Key Features
- This transistor is configured as a single PNP type suitable for surface mount.
- Maximum power dissipation is 225 mW allowing for effective thermal management.
- The SOT-23 package features 3 pins with compact dimensions of length 3.04 mm, width 2.64 mm, and height 1.11 mm.
- It supports a maximum transition frequency of 100 MHz, enabling high-speed switching applications.
- Operating temperature range spans from -55°C to 150°C for reliable performance in various environments.
- The device offers a minimum DC current gain (hFE) of 20 for stable amplification.
- It includes maximum voltage ratings of 40 V collector-base and -5 V emitter-base for robust operation.
- This transistor is suitable for electronics industrial, communication, and power management applications.
Product Description
onsemi MMBT4403LT3G is a general purpose PNP bipolar transistor packaged in a compact SOT-23 surface-mount form factor. It is designed to handle a maximum DC collector current of 600 mA and operates at a collector-emitter voltage of up to 40 V DC, ideal for low power switching and amplification tasks.
The transistor features a single PNP configuration, offering versatility in electronic circuit designs. It has a maximum power dissipation capability of 225 mW, ensuring adequate heat handling in typical operating conditions.
Physical dimensions of 3.04 mm length, 2.64 mm width, and 1.11 mm height make it suitable for dense PCB layouts and compact designs. With a maximum transition frequency of 100 MHz, this device supports rapid switching applications commonly found in telecommunications and signal processing equipment.
The operating temperature range from -55°C to 150°C makes the MMBT4403LT3G transistor reliable across harsh environmental conditions encountered in industrial, automotive, and consumer electronics sectors.
This transistor is configured as a single PNP type suitable for surface mount. Maximum power dissipation is 225 mW allowing for effective thermal management. The SOT-23 package features 3 pins with compact dimensions of length 3.04 mm, width 2.64 mm, and height 1.11 mm.
It supports a maximum transition frequency of 100 MHz, enabling high-speed switching applications. Operating temperature range spans from -55°C to 150°C for reliable performance in various environments. The device offers a minimum DC current gain (hFE) of 20 for stable amplification.
It includes maximum voltage ratings of 40 V collector-base and -5 V emitter-base for robust operation. This transistor is suitable for electronics industrial, communication, and power management applications. Applications include industrial automation, power regulation, electronic switching circuits, and communication modules.
Explore more semiconductor devices and Bipolar Transistors in the Electronics & Electricals category on EnvMart to complete your electronic design needs.
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Frequently Asked Questions
The maximum collector current for this model is 600 mA.
It operates within a temperature range of -55°C to 150°C.
The SOT-23 package has dimensions of 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.
The maximum power dissipation for this transistor is 225 mW.
The maximum collector-emitter voltage rating is 40 V DC.
The minimum DC current gain (hFE) is 20.
It supports a maximum transition frequency of 100 MHz.
This transistor uses surface mount technology.
The maximum emitter-base voltage is -5 V, and the maximum collector-base voltage is 40 V DC.
It is configured as a single PNP type transistor.
This transistor is suitable for applications in industrial automation, power regulation, electronic switching circuits, and communication modules.
The country of origin for this model is India.
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