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onsemi Transistor PNP 3-Pin SOT-23 600 mA Maximum Collector Current 40 V DC Voltage MMBT4403LT3G

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onsemi Transistor PNP 3-Pin SOT-23 600 mA Maximum Collector Current 40 V DC Voltage MMBT4403LT3G

Name: onsemi Transistor PNP 3-Pin SOT-23 600 mA Maximum Collector Current 40 V DC Voltage MMBT4403LT3G
Brand: onsemi
SKU: 131362

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	MMBT4403LT3G
Width	2.64mm
Mount Type	Surface
Series	MMBT4403L
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-40V dc
Minimum DC Current Gain hFE	20
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-5V
Maximum Collector Base Voltage VCBO	40V dc
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	-600mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

This transistor is configured as a single PNP type suitable for surface mount.
Maximum power dissipation is 225 mW allowing for effective thermal management.
The SOT-23 package features 3 pins with compact dimensions of length 3.04 mm, width 2.64 mm, and height 1.11 mm.
It supports a maximum transition frequency of 100 MHz, enabling high-speed switching applications.
Operating temperature range spans from -55°C to 150°C for reliable performance in various environments.
The device offers a minimum DC current gain (hFE) of 20 for stable amplification.
It includes maximum voltage ratings of 40 V collector-base and -5 V emitter-base for robust operation.
This transistor is suitable for electronics industrial, communication, and power management applications.

Product Description

onsemi MMBT4403LT3G is a general purpose PNP bipolar transistor packaged in a compact SOT-23 surface-mount form factor. It is designed to handle a maximum DC collector current of 600 mA and operates at a collector-emitter voltage of up to 40 V DC, ideal for low power switching and amplification tasks.

The transistor features a single PNP configuration, offering versatility in electronic circuit designs. It has a maximum power dissipation capability of 225 mW, ensuring adequate heat handling in typical operating conditions.

Physical dimensions of 3.04 mm length, 2.64 mm width, and 1.11 mm height make it suitable for dense PCB layouts and compact designs. With a maximum transition frequency of 100 MHz, this device supports rapid switching applications commonly found in telecommunications and signal processing equipment.

The operating temperature range from -55°C to 150°C makes the MMBT4403LT3G transistor reliable across harsh environmental conditions encountered in industrial, automotive, and consumer electronics sectors.

This transistor is configured as a single PNP type suitable for surface mount. Maximum power dissipation is 225 mW allowing for effective thermal management. The SOT-23 package features 3 pins with compact dimensions of length 3.04 mm, width 2.64 mm, and height 1.11 mm.

It supports a maximum transition frequency of 100 MHz, enabling high-speed switching applications. Operating temperature range spans from -55°C to 150°C for reliable performance in various environments. The device offers a minimum DC current gain (hFE) of 20 for stable amplification.

It includes maximum voltage ratings of 40 V collector-base and -5 V emitter-base for robust operation. This transistor is suitable for electronics industrial, communication, and power management applications. Applications include industrial automation, power regulation, electronic switching circuits, and communication modules.

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