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onsemi Transistor NPN 800 mA 45 V 3-Pin TO-92 BC33740TA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 18.03mm
Length 5.2mm
Model BC33740TA
Width 4.19mm
Mount Type Through Hole
Series BC327
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 800mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Designed for through-hole mounting with a 3-pin TO-92 package.
  • Maximum power dissipation of 625 mW ensures robust operation.
  • Minimum DC current gain (hFE) of 60 provides good amplification.
  • Wide operating temperature range from -55°C to 150°C.
  • Maximum transition frequency of 100 MHz supports high-speed switching applications.
  • Maximum collector base voltage of 50 V and emitter base voltage of 5 V.
  • Compact dimensions of 18.03 mm height, 5.2 mm length, and 4.19 mm width.
  • Suitable for various bipolar transistor applications requiring reliable NPN device performance.

Product Description

onsemi BC33740TA Bipolar Junction Transistor (BJT) is a small signal NPN transistor housed in a 3-pin TO-92 package. It has a maximum DC collector current rating of 800 mA and a maximum collector-emitter voltage of 45 V, making it suitable for a wide range of general-purpose amplification and switching applications.

The device features a maximum power dissipation of 625 mW and a minimum DC current gain (hFE) of 60, ensuring efficient performance in low-power circuits. The transistor can operate reliably over a broad temperature range from -55°C to 150°C, offering durability under harsh environmental conditions.

With a transition frequency upto 100 MHz, the BC33740TA supports moderate high-frequency applications, while its compact TO-92 package aids easy integration in through-hole PCB designs. The maximum collector base voltage is rated at 50 V and the emitter base voltage at 5 V, suitable for stable operation within these limits.

The transistor’s dimensions include a height of 18.03 mm, length of 5.2 mm, and width of 4.19 mm, providing a compact footprint for space-constrained electronic assemblies.

This transistor series is ideal for use in various electronic circuits such as amplifiers, switching devices, and other bipolar transistor applications in industrial, consumer electronics, automation, and instrumentation sectors.

Designed for through-hole mounting with a 3-pin TO-92 package. Maximum power dissipation of 625 mW ensures robust operation. Minimum DC current gain (hFE) of 60 provides good amplification. Wide operating temperature range from -55°C to 150°C.

Maximum transition frequency of 100 MHz supports high-speed switching applications. Maximum collector base voltage of 50 V and emitter base voltage of 5 V. Compact dimensions of 18.03 mm height, 5.2 mm length, and 4.19 mm width.

Suitable for various bipolar transistor applications requiring reliable NPN device performance. Explore the Electonics & Electricals category for more Bipolar Transistors and semiconductors on EnvMart.

onsemi Transistor NPN 800 mA 45 V 3-Pin TO-92 BC33740TA
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Frequently Asked Questions

The maximum DC collector current rating of this model is 800 mA.

It has a maximum power dissipation of 625 mW, ensuring robust operation in low-power circuits.

This transistor operates reliably over a wide temperature range from -55°C to 150°C.

The dimensions of this unit are 18.03 mm in height, 5.2 mm in length, and 4.19 mm in width.

The maximum transition frequency of this model is 100 MHz, supporting moderate high-frequency applications.

The BC33740TA is housed in a 3-pin TO-92 package designed for through-hole mounting.

It has a minimum DC current gain (hFE) of 60, providing good amplification for various applications.

The maximum collector-emitter voltage is 45 V, and the maximum emitter-base voltage is 5 V.

This model is an NPN bipolar junction transistor, suitable for general-purpose amplification and switching applications.

The country of origin for this transistor is India.

The maximum collector-base voltage (VCBO) for this model is rated at 50 V.

This transistor is suitable for various electronic circuits including amplifiers and switching devices in industrial and consumer electronics.

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