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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | NVTR4503NT1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 140mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 730mW |
| Typical Gate Charge Qg @ Vgs | 3.6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
onsemi NVTR4503NT1G is a high-performance N-Channel Power MOSFET designed for efficient switching and power management applications. It supports a maximum continuous drain current of 2.5 A and withstands drain-source voltages up to 30 V. The device employs an enhancement mode channel in a compact 3-pin SOT-23 surface mount package, ideal for space-constrained electronic designs.
With a low maximum drain-source resistance of 140 mΩ, this MOSFET ensures minimal conduction losses. The device can dissipate up to 730 mW of power, maintaining robust operation over a temperature range from -55°C to 150°C, making it suitable for harsh industrial and automotive environments.
The typical gate charge of 3.6 nC supports rapid switching, enhancing efficiency in power circuits. It complies with the automotive standard AEC-Q101, ensuring reliability and quality in automotive semiconductor usage.
Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.01 mm height allow flexible integration into densely packed PCBs. This MOSFET is ideal for applications including industrial controls, automotive electronics, power supplies, and other semiconductor-dependent systems requiring reliable power switching capabilities.
This MOSFET supports a maximum continuous drain current of 2.5 amperes. It operates at a maximum drain-source voltage of 30 volts for reliable switching. Equipped with a surface mount SOT-23 package and 3 pins for compact PCB integration.
Features enhancement mode channel operation with low drain-source resistance of 140 milliohms. Maximum power dissipation is 730 milliwatts enabling efficient thermal management. Functionality maintained from -55°C to 150°C operating temperature range.
Typical gate charge at 3.6 nanocoulombs ensures fast switching performance. Automotive standard compliant with AEC-Q101 for enhanced reliability. Compact dimensions with length 3.04 mm, width 1.4 mm, and height 1.01 mm. Designed for industrial and automotive semiconductor applications requiring efficient power handling.
Explore more high-quality power semiconductor devices and MOSFET solutions at EnvMart, catering to industrial, automotive, and electronics professionals seeking reliable and efficient components.
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