onsemi N-Channel MOSFET, 380 mA, 60 V Enhancement Mode, 3-Pin SOT-23 Package 2N7002KT1G

onsemi 2N7002KT1G N-Channel MOSFET is a small signal Discrete Semiconductor designed for surface mount applications in a 3-pin SOT-23 package. It supports a maximum continuous drain current of 380 mA and operates at a maximum drain-source voltage of 60 V in enhancement mode, providing efficient switching for low power systems.

The device features ESD protection to improve system reliability and efficiency, making it ideal for applications including DC-DC converters, level shifting circuits, and low side load switching in portable devices such as phones, PDAs, digital still cameras, laptops, and tablets.

With a maximum power dissipation rating of 420 mW and operating temperature range from -55°C up to 150°C, the 2N7002KT1G suits demanding industrial and automotive environments conforming to AEC-Q101 automotive standards.

Its compact SOT-23 package (3.04 mm length x 1.4 mm width x 1.01 mm height) makes it well suited for dense PCB layouts requiring surface mount technology.

Key electrical parameters include maximum gate-source voltage of ±20 V, typical gate charge of 0.7 nC at Vgs, forward voltage of 1.2 V, and maximum drain-source resistance of 2.5 Ω, ensuring reliable switching and drive characteristics in various circuit designs.

Maximum continuous drain current: 380 mA. Drain-source voltage rating: 60 V. Power dissipation: 420 mW. Small surface mount SOT-23 package. Enhancement mode N-Channel MOSFET. Operating temperature range: -55°C to 150°C. Typical gate charge: 0.7 nC.

Automotive grade AEC-Q101 compliant. Applications in portable electronics, power management, and automotive systems.

This product is listed under the Semiconductor category, suitable for engineers and designers working in electronics manufacturing, industrial controls, automotive electronics, and consumer portable devices. Explore more semiconductor components from onsemi in EnvMart for advanced system design needs.